S34ML08G201BHB003 Allicdata Electronics
Allicdata Part #:

S34ML08G201BHB003-ND

Manufacturer Part#:

S34ML08G201BHB003

Price: $ 12.48
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 8G PARALLEL
More Detail: FLASH - NAND Memory IC 8Gb (1G x 8) Parallel
DataSheet: S34ML08G201BHB003 datasheetS34ML08G201BHB003 Datasheet/PDF
Quantity: 1000
2300 +: $ 11.34780
Stock 1000Can Ship Immediately
$ 12.48
Specifications
Series: Automotive, AEC-Q100, ML-2
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

S34ML08G201BHB003 is a type of Memory that has some distinct features and a wide range of applications. It has a low-voltage operation, high storage capacity, and fast data read/write speeds. Memory is necessary for any computer system and S34ML08G201BHB003 is an ideal solution for providing important data storage.

Application Field

S34ML08G201BHB003 can be used in a variety of applications. It is ideal for embedded applications such as automotive and industrial control systems, where reliable data storage is required. It also has a wide range of applications in consumer electronics, such as handheld GPS devices, digital cameras, PDAs, and many others. Its low voltage operation also makes it suitable for battery-powered devices. Additionally, S34ML08G201BHB003 can be used in high-end professional audio and video storage solutions, making it ideal for mission-critical applications.

Working Principle

S34ML08G201BHB003 is a multi-level cell (MLC) NAND-type flash memory. It uses an X-type storage cell structure, which consists of a select transistor, four storage transistors, and an access transistor. The data stored in a S34ML08G201BHB003 cell can take up to four different states, allowing for high storage capacities. S34ML08G201BHB003 also employs an advanced error correction code (ECC) algorithm, which can detect and correct errors when reading and writing data. Furthermore, the memory supports built-in wear-leveling, which helps ensure the reliable operation of the memory over the long-term.

Conclusion

S34ML08G201BHB003 is a type of Memory with a wide range of applications and excellent performance. Its X-type storage cell structure and built-in ECC provide high data storage capacity as well as reliable operations. Furthermore, its low-voltage operation and wear-leveling feature make it ideal for battery-powered devices. Given these advantages, S34ML08G201BHB003 is an excellent choice for a wide range of applications, from embedded systems to consumer electronics and mission-critical professional storage solutions.

The specific data is subject to PDF, and the above content is for reference

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