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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IPI65R280C6XKSA 1-ND	IPI65R280C6XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 440A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IPP120N08S404AK SA1-ND	IPP120N08S404AK SA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 120A Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Power Dissipation (Max): 179W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	500+: $1.1805
IPW60R299CPFKSA 1-ND	IPW60R299CPFKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 440A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Power Dissipation (Max): 96W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	1000 Order	1+: $0
AUIRLS8409-7TRL -ND	AUIRLS8409-7TRL	Infineon Technologies	View more Series: * Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.75 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 266nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 16488pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, DPak (6 Leads + Tab)	1000 Order	800+: $2.0861
IPP60R099CPAAKS A1-ND	IPP60R099CPAAKS A1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V Power Dissipation (Max): 255W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	500+: $3.3254
FZ600R12KE3HOSA 1-ND	FZ600R12KE3HOSA 1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 900A Power - Max: 2800W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 42nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 125C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $88.0047
IRG7CH20K10EF-N D	IRG7CH20K10EF	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
IRLML5103PBFTR- ND	IRLML5103TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 760mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V Power Dissipation (Max): 540mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro3/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	30000 Order	--
IFF300B17N2E4PB 11BPSA1-ND	IFF300B17N2E4PB 11BPSA1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 400A Power - Max: 1500W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 27nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $96.5244
F3L300R12MT4B23 BOSA1-ND	F3L300R12MT4B23 BOSA1	Infineon Technologies	View more Series: EconoDUAL 3 Part Status: Active IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 450A Power - Max: 1550W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 19nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $112.88
2LS20017E42W404 03NOSA1-ND	2LS20017E42W404 03NOSA1	Infineon Technologies	View more Series: * Part Status: Not For New Designs	1000 Order	1+: $1.89
BF999E6327HTSA1 TR-ND	BF999E6327HTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Transistor Type: N-Channel Frequency: 45MHz Gain: 27dB Voltage - Test: 10V Current Rating: 30mA Noise Figure: 2.1dB Current - Test: 10mA Voltage - Rated: 20V Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	1000 Order	--
IRG7T300CH12B-N D	IRG7T300CH12B	Infineon Technologies	View more Part Status: Obsolete Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 570A Power - Max: 1600W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A Current - Collector Cutoff (Max): 4mA Input Capacitance (Cies) @ Vce: 42.4nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR 62 Module Supplier Device Package: POWIR 62	1000 Order	1+: $0
PTFA191001EV4R2 50XTMA1-ND	PTFA191001EV4R2 50XTMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: LDMOS Frequency: 1.96GHz Gain: 17dB Voltage - Test: 30V Current Rating: 10A Current - Test: 900mA Power - Output: 44dBm Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads Supplier Device Package: H-36248-2 Base Part Number: PTFA191001	1000 Order	1+: $0
BG3123RH6327XTS A1TR-ND	BG3123RH6327XTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 N-Channel (Dual) Frequency: 800MHz Gain: 25dB Voltage - Test: 5V Current Rating: 25mA, 20mA Noise Figure: 1.8dB Current - Test: 14mA Voltage - Rated: 8V Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BG3123	1000 Order	1+: $0
BFP460E6327HTSA 1TR-ND	BFP460E6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.8V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz Gain: 12.5dB ~ 26.5dB Power - Max: 230mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4 Base Part Number: BFP460	1000 Order	--
BFP420E6327BTSA 1TR-ND	BFP420E6327BTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 21dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4 Base Part Number: BFP420	1000 Order	1+: $0
BCR35PNH6327XTS A1TR-ND	BCR35PNH6327XTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BCR35PN	1000 Order	3000+: $0.0438 6000+: $0.0381 15000+: $0.0324 30000+: $0.0305 75000+: $0.0286
IKCM30F60GAXKMA 1-ND	IKCM30F60GAXKMA 1	Infineon Technologies	View more Series: CIPOS Part Status: Active Type: IGBT Configuration: 3 Phase Current: 30A Voltage: 600V Voltage - Isolation: 2000Vrms Package / Case: 24-PowerDIP Module (1.028", 26.10mm)	200 Order	1+: $9.8721 10+: $9.0726 280+: $7.2864
IRSM636-015MBTR TR-ND	IRSM636-015MBTR	Infineon Technologies	View more Part Status: Active	1000 Order	2000+: $3.1073
IRF7757TRPBF-ND	IRF7757TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.8A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V Power - Max: 1.2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	1000 Order	1+: $0
IRG4BC40FPBF-ND	IRG4BC40FPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 49A Current - Collector Pulsed (Icm): 196A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A Power - Max: 160W Switching Energy: 370J (on), 1.81mJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25C: 26ns/240ns Test Condition: 480V, 27A, 10 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	1139 Order	--
IHW40N65R5XKSA1 -ND	IHW40N65R5XKSA1	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A Power - Max: 230W Switching Energy: 630J (on), 140J (off) Input Type: Standard Gate Charge: 193nC Td (on/off) @ 25C: 30ns/258ns Test Condition: 400V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 90ns Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	242 Order	1+: $2.5956 10+: $2.3297 100+: $1.909 500+: $1.6251 1000+: $1.3705
IPP90R1K2C3XKSA 1-ND	IPP90R1K2C3XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 310A Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	2575 Order	1+: $1.197 10+: $1.0792 100+: $0.8673 500+: $0.6745 1000+: $0.5589
IRFS3004TRLPBFT R-ND	IRFS3004TRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 195A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V Power Dissipation (Max): 380W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	800 Order	--
IPB020N08N5ATMA 1TR-ND	IPB020N08N5ATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 208A Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 40V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	2000 Order	--
IRLB4030PBF-ND	IRLB4030PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 110A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V Power Dissipation (Max): 370W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	749 Order	--
IRFB7446GPBF-ND	IRFB7446GPBF	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 3.9V @ 100A Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3183pF @ 25V Power Dissipation (Max): 99W (Tc) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1225 Order	--
IGW30N100TFKSA1 -ND	IGW30N100TFKSA1	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 412W Switching Energy: 3.8mJ Input Type: Standard Gate Charge: 217nC Td (on/off) @ 25C: 33ns/535ns Test Condition: 600V, 30A, 16 Ohm, 15V Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	71 Order	1+: $3.4902 10+: $3.1349 100+: $2.5683 500+: $2.1863 1000+: $1.8439
D1821SH45TPRXPS A1-ND	D1821SH45TPRXPS A1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500V Current - Average Rectified (Io): 2210A Voltage - Forward (Vf) (Max) @ If: 3.6V @ 2500A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 150mA @ 4500V Mounting Type: Chassis Mount Package / Case: DO-200AE Operating Temperature - Junction: 0C ~ 140C	1000 Order	1+: $0.63
BAS4002S02LRHE6 327XTSA1TR-ND	BAS4002S02LRHE6 327XTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 10A @ 40V Capacitance @ Vr, F: 12pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2 Operating Temperature - Junction: -55C ~ 150C Base Part Number: BAS4002	1000 Order	1+: $0
IDH12SG60CXKSA1 -ND	IDH12SG60CXKSA1	Infineon Technologies	View more Series: CoolSiC Packaging: Tube Part Status: Discontinued at Digi-Key Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100A @ 600V Capacitance @ Vr, F: 310pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $4.2462 10+: $3.8373 100+: $3.1772 500+: $2.7666 1000+: $2.4096
DD81S14KHPSA1-N D	DD81S14KHPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io) (per Diode): 96A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 40mA @ 1400V Operating Temperature - Junction: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	15+: $69.3901
DD350N18KHPSA1- ND	DD350N18KHPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io) (per Diode): 350A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 1000A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 30mA @ 1800V Operating Temperature - Junction: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	3+: $101.417
KITTC1791SKIN-N D	KIT_TC1791_SK	Infineon Technologies	View more Series: TC17xx Part Status: Active Board Type: Evaluation Platform Type: MCU 32-Bit Core Processor: TriCore Platform: AUDO For Use With/Related Products: TC1791 Mounting Type: Fixed Contents: Board(s), Cable(s), Power Supply, Accessories	1 Order	1+: $0.63
TC212L8F133NACL XUMA1-ND	TC212L8F133NACL XUMA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	1800+: $4.7525
XE164G96F66LACF XQMA1-ND	XE164G96F66LACF XQMA1	Infineon Technologies	View more Series: XE16x Packaging: Tray Part Status: Not For New Designs Core Processor: C166SV2 Core Size: 16-Bit Speed: 66MHz Connectivity: CANbus, EBI/EMI, IC, LINbus, SPI, SSC, UART/USART, USI Peripherals: IS, POR, PWM, WDT Number of I/O: 75 Program Memory Size: 768KB (768K x 8) Program Memory Type: FLASH RAM Size: 82K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 11x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 100-LQFP Exposed Pad Supplier Device Package: PG-LQFP-100-3 Base Part Number: SA*XE164G	1000 Order	540+: $5.4879
SAF-XC878CM-13F FI5VAA-ND	SAF-XC878CM-13F FI 5V AA	Infineon Technologies	View more Series: XC8xx Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Core Processor: XC800 Core Size: 8-Bit Speed: 27MHz Connectivity: CANbus, SPI, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Number of I/O: 40 Program Memory Size: 52KB (52K x 8) Program Memory Type: FLASH RAM Size: 3.25K x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10) Base Part Number: SA*XC878CM	1000 Order	1+: $0
XMC4400F64K512A BXQSA1-ND	XMC4400F64K512A BXQSA1	Infineon Technologies	View more Series: XMC4000 Packaging: Tray Part Status: Discontinued at Digi-Key Core Processor: ARM Cortex-M4 Core Size: 32-Bit Speed: 120MHz Connectivity: CANbus, Ethernet, IC, LINbus, SPI, UART, USB Peripherals: DMA, IS, LED, POR, PWM, WDT Number of I/O: 31 Program Memory Size: 512KB (512K x 8) Program Memory Type: FLASH RAM Size: 80K x 8 Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V Data Converters: A/D 14x12b; D/A 2x12b Oscillator Type: Internal Operating Temperature: -40C ~ 125C (TA) Package / Case: 64-TQFP Exposed Pad Supplier Device Package: PG-TQFP-64-19	1000 Order	1+: $0
IRFP150MPBF-ND	IRFP150MPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 36 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 160W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	430 Order	--

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