BFP420E6327BTSA1 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5V
Frequency - Transition:	25GHz
Noise Figure (dB Typ @ f):	1.1dB @ 1.8GHz
Gain:	21dB
Power - Max:	160mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 20mA, 4V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	PG-SOT343-4
Base Part Number:	BFP420

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Introduction

The BFP420E6327BTSA1 is a RF N-Channel insulated-gate bipolar transistor (IGBT) with enhanced balun output. It is designed for use in wireless applications such as wireless local loop (WLL) and Global System for Mobile Communication (GSM) communications. It utilizes an advanced vertical double diffused MOS (DMOS) epitaxial structure and is designed to operate as a broadband amplifier. Its large active base area and increased gain provide enhanced linearity whilst its rugged construction ensures reliable operation.

Features

The BFP420E6327BTSA1 offers a number of features for users:

• Low parasitic capacitance
• High output power
• Fully integrated balun output
• Robust performance under harsh environmental conditions
• Good manufacturability
• Wide operation range
• Low operating temperature

Applications

The BFP420E6327BTSA1 is designed to be used in WLL and GSM radio applications. Its low parasitic capacitance offers improved performance in GSM radio base station designs while its on-chip balun offers an enhanced efficiency by transferring the ac current in the antenna structure to the transistors active device area.In addition, the BFP420E6327BTSA1 provides superior performance over existing RF amplified RF systems. Its large active area and increased gain improves the linearity and its rugged construction ensures lower noise. As a result, the BFP420E6327BTSA1 is suitable for a number of applications including but not limited to WLL and GSM radio base station designs, digital broadcasting systems and professional wireless data transfer systems.

Working Principle

The BFP420E6327BTSA1 works on the principle of bipolar junction transistor (BJT). A BJT consists of three layers of semiconductor materials which form the base, emitter and collector. The BJT is a three terminal device and when current is applied to the base terminal an amplified voltage appears across the collector and emitter terminals.In the BFP420E6327BTSA1, the three layers are connected externally to specific pins and internally to form the N-channel insulated-gate bipolar transistor (IGBT). This means that the BJT has now been integrated into the IGBT and can be used to switch high power signals.The BFP420E6327BTSA1 also has an enhanced balun output. This means that ac signals that are transmitted along the antenna structure are transferred to the transistors active device area. This offers a higher efficiency as the ac current is optimally converted to a signal that can be transmitted through the transistors active device area.

Conclusion

The BFP420E6327BTSA1 has been designed to be used in WLL and GSM radio applications. It has a low parasitic capacitance which improves performance in these applications. It also features an on-chip balun for an enhanced efficiency. Additionally, its larger active area and increased gain improve the linearity and its rugged construction ensures lower noise. As a result, the BFP420E6327BTSA1 is suitable for a number of applications including but not limited to WLL and GSM radio base station designs, digital broadcasting systems and professional wireless data transfer systems.

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