
Allicdata Part #: | PTFA191001EV4R250XTMA1-ND |
Manufacturer Part#: |
PTFA191001EV4R250XTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IC FET RF LDMOS 100W H-36248-2 |
More Detail: | RF Mosfet LDMOS 30V 900mA 1.96GHz 17dB 44dBm H-362... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.96GHz |
Gain: | 17dB |
Voltage - Test: | 30V |
Current Rating: | 10µA |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 44dBm |
Voltage - Rated: | 65V |
Package / Case: | 2-Flatpack, Fin Leads |
Supplier Device Package: | H-36248-2 |
Base Part Number: | PTFA191001 |
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A PFTA191001EV4R250XTMA1 is a type of Field-Effect Transistor (FET) used in a variety of applications. It is commonly used as a radio-frequency (RF) switching, amplification, and detection device, such as in a wireless communication, as well as for power supply, signal conditioning, instrumentation, and industrial automation. The device has an extremely fast switching speed and low power consumption, which makes it well suited for a variety of uses.
The PFTA191001EV4R250XTMA1 is an enhancement-mode N-channel MOSFET. It has a high-k dielectric gate insulation, which gives it increased switching speeds compared to other FETs. The device has a maximum drain current of 500 mA, a maximum voltage of 175 V, and a power dissipation of 7.5 Watts. The turn-on and turn-off times are extremely fast, which makes it ideal for use in high-speed switching applications.
The device operates using the same basic principles as any other FET, as described below.
The PFTA191001EV4R250XTMA1 is an insulated-gate FET. This means that the gate terminal is insulated from the other two terminals, the source and drain. When a voltage is applied to the gate terminal, the electrons inside the device are attracted to the gate, creating an electric field around the gate which induces the current flowing between the source and the drain.
The current that flows through the FET is determined by two factors; the strength of the electric field around the gate and the resistance of the material that separates the gate from the source and drain. This resistance is known as the channel resistance. The channel resistance of the PFTA191001EV4R250XTMA1 is relatively low compared to other MOSFETs, which allows it to conduct large currents with minimal power dissipation.
Another factor that affects the operation of the PFTA191001EV4R250XTMA1 is the threshold voltage. This is the voltage at which the device begins to conduct current. The threshold voltage of the PFTA191001EV4R250XTMA1 is relatively low compared to other MOSFETs, which allows it to turn on and off quickly and efficiently.
The PFTA191001EV4R250XTMA1 is a versatile device that can be used for a variety of applications. It is commonly used in radio-frequency applications such as modulators, switches, amplifiers, and detectors. It is also used in power supply, signal conditioning, instrumentation, and industrial automation. The device has a fast switching speed, low power consumption, and a low threshold voltage, which makes it well suited for these applications.
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