IPP120N08S404AKSA1 Allicdata Electronics
Allicdata Part #:

IPP120N08S404AKSA1-ND

Manufacturer Part#:

IPP120N08S404AKSA1

Price: $ 1.31
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH TO220-3
More Detail: N-Channel 80V 120A (Tc) 179W (Tc) Through Hole PG-...
DataSheet: IPP120N08S404AKSA1 datasheetIPP120N08S404AKSA1 Datasheet/PDF
Quantity: 1000
500 +: $ 1.18052
Stock 1000Can Ship Immediately
$ 1.31
Specifications
Vgs(th) (Max) @ Id: 4V @ 120µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 179W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The Ipp120N08S404AKSA1 is a type of power MOSFET (metal oxide semiconductor field effect transistor) manufactured by Infineon Technologies. Power MOSFETs are a type of transistor capable of high power switching or amplifying electrical signals. The Ipp120N08S404AKSA1 is rated for 11.4A current which makes it a suitable component for industrial and consumer applications.

The Ipp120N08S404AKSA1 belongs to the N-channel enhancement mode MOSFET family, which includes components capable of operating at high frequencies such as switching power supplies or in similar electrical circuits. As such, it can be used in medium power applications such as air handling systems, motor drives, industrial controls, and lighting systems.

The Ipp120N08S404AKSA1 is composed of three members: the drain, source, and gate. The source is essentially the source of electrons and is where the majority of current flow will occur. The gate is essentially a control electrode and is used to turn the component on or off. The drain is the output of the component, and the drain-to-source voltage is where the power of the component is measured and monitored.

The working principle of the Ipp120N08S404AKSA1 is based on the fact that when a relatively small voltage is applied to the gate, and no current flows through the device, the gate-to-source voltage (Vgs) will establish a region of depletion in the MOSFET channel, which will prevent the flow of electrons from source to drain. However, when a larger voltage is applied to the gate, the depletion region will disappear and electrons will begin to flow from source to drain. This will allow a large amount of current to flow, but this flow can be regulated by adjusting the gate voltage.

The Ipp120N08S404AKSA1 is able to switch at high frequencies and can be used in applications such as switching power supplies, motor drives, industrial controls, and lighting systems. Its low on-state resistance, Schottky diode built-in, and fast switching speed make it suitable for a vast array of applications. The Ipp120N08S404AKSA1 is a robust component that is produced with a lead-free, D3-compliant molding compound, making it an excellent choice for consumer and high-volume applications.

The specific data is subject to PDF, and the above content is for reference

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