IPP60R099CPAAKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPP60R099CPAAKSA1 is an insulated gate bipolar transistor (IGBT) that is part of the IGBTBoost product family from Infineon Technologies. It is an insulated gate high voltage MOSFET/IGBT combination. It is mainly used in motor control and solar cells applications.

In a MOSFET/IGBT combination, the MOSFET or metal oxide semiconductor field effect transistor functions as the main switching component and the IGBT acts as the secondary switching component. The purpose of the IGBT is to provide a bidirectional control of current flow. The IGBT is a four-terminal device with an insulated gate, which allows the transistor to be switched on and off using a gate signal.

The IPP60R099CPAAKSA1 is designed for logic or PWM-type gate signals with a maximum of 20 volts. It has a low on-state resistance, which helps to reduce power losses. It also features a current limitation and an anti-parallel diode to provide protection against short-circuit, overload, and over-temperature conditions. It is compliant with the European Standby Directive requirements, meaning that it can be used in devices that are required to meet the idle current requirements specified in the directive.

The IPP60R099CPAAKSA1 has a maximum rating of 600 volts, 5.5 amperes, and is designed for continuous operation under high temperatures. It has a low reverse recovery time, which helps to reduce switching losses. Due to its high current and low on-state resistance, the IPP60R099CPAAKSA1 can be used in a range of switching applications, including motor control, power supplies, solar cells, and industrial automation.

The IPP60R099CPAAKSA1 has a working principle similar to other insulated gate bipolar transistors. When a gate signal is applied to the gate terminal, an electric field is created which causes the channel to invert. This inversion of the channel creates a low-resistance path for current to flow through. By changing the gate voltage, the on-state resistance of the transistor can be changed and thus the amount of current that can flow through the device can be controlled. When the gate voltage is reduced to zero volts, the channel is returned to its off state, blocking the flow of current.

The IPP60R099CPAAKSA1 is designed for high-speed switching applications, making it an ideal choice for motor control and solar cells applications where fast switching speeds, low on-state resistance, and high current handling capabilities are needed. Additionally, it is compliant with the European Standby Directive, making it suitable for use in products that are required to meet the idle current requirements specified in the directive.

The specific data is subject to PDF, and the above content is for reference