IRG7CH20K10EF Allicdata Electronics
Allicdata Part #:

IRG7CH20K10EF-ND

Manufacturer Part#:

IRG7CH20K10EF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V DIE
More Detail: IGBT
DataSheet: IRG7CH20K10EF datasheetIRG7CH20K10EF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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An IRG7CH20K10EF is a single IGBT that uses a small signal as an input and switches a much larger electrical current from an external power source. It is a type of transistor that is known for having a low switching loss, high frequency operation, high surge current, and low on-state voltage drop.

IGBTs (Insulated Gate Bipolar Transistors) are essentially a hybrid between a field-effect transistor and bipolar transistor. Unlike regular transistors, IGBTs act like a voltage-controlled switch and are widely used in a variety of applications such as motor drives, power welding inverters, automated manufacturing, and uninterruptibly power supplies.

The IRG7CH20K10EF is a type of single IGBT which can help to reduce power dissipation and improve efficiency when driving large loads such as motors, relays or solenoids. It is a 600V class device with a reverse-blocking capability up to 20A. It is rated for a maximum on-state current of 10A and a maximum on-state voltage drop of 2.0-2.8V.

The IRG7CH20K10EF operates at a low VCE(sat) and is designed for high-current applications with a low gate charge and short propagation delay. It is a very fast switching device, capable of switching frequencies up to 650kHz, and has a very low gate-emitter capacitance which reduces gate-drive losses. In addition, it is also capable of operating in PWM (pulse-width modulation) modes, which allows it to control the speed and torque of motor drives with precise accuracy and high efficiency.

The working principle of the IRG7CH20K10EF is simple. When the metal base is charged with a low voltage, a conductive layer of metal-oxide-semiconductor (MOS) forms between the base and the collector. This MOS layer works as a gate, allowing the current to flow between the source and the drain. When the voltage is increased, the gate begins to pinch off the passing electrons and the transistor is switched off.

The IRG7CH20K10EF is commonly used in a variety of applications such as AC motor control and DC motor control, solar inverters, Uninterruptable Power Supply (UPS) systems, power welding, automated manufacturing, and UPS systems. It is highly efficient in these applications, due to its low switching losses and fast switching speeds.

In short, the IRG7CH20K10EF is an IGBT transistor that is used in various applications such as motor control, solar inverters, AC and DC motor drives, UPS systems, and power welding. It is a single IGBT with reverse blocking capability up to 20A, maximum on-state voltage drop of 2.0-2.8V, and switching frequency of up to 650kHz. Its working principle is based on a metal-oxide-semiconductor (MOS) gate between the source and the drain, allowing it to switch on and off through a low voltage. The IRG7CH20K10EF offers high efficiency and low switching loss, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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