IPW60R299CPFKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPW60R299CPFKSA1 device is a single N-Channel Enhancement Mode Power MOSFET. Commonly used in low side switching applications, this switch is designed for use with a wide variety of DC-to-DC converters, where a low on resistance is required. This MOSFET also offers high switching speed and very low gate charge. As with all MOSFETs, user should pay close attention to the application of the device and carefully select the appropriate transistor type for the application.

Application Field

The IPW60R299CPFKSA1 is a low on-resistance device that can be used in a wide range of low-side switching applications, such as automotive, consumer, telecommunications, industrial, medical, and audio/video applications. This device is especially recommended for use in DC-to-DC converters where low on-resistance is required for excellent power efficiency. In addition, the IPW60R299CPFKSA1 can also be used for high speed, low-noise, wideband amplifiers, as it provides low input capacitance and low gate-to-drain capacitance.

Working Principle

The IPW60R299CPFKSA1 is an N-Channel Enhancement Mode field-effect transistor (FET). This particular MOSFET has an enhancement mode of operation, meaning that it is similar to a normally closed switch, with the source current being completely shut off when the gate-to-source is OFF. This MOSFET also has a high switching speed, as the drain current will begin to flow almost instantaneously once the gate-to-source voltage is greater than a minimum threshold voltage. With its low gate charge, the IPW60R299CPFKSA1 can achieve switching times of less than 10ns, allowing for a very fast response and excellent high frequency performance.

To properly utilize the IPW60R299CPFKSA1, the gate must be driven with a low current source or sink. A low current source is able to drive the gate voltage to high positive values, enabling the device to turn ON quickly and efficiently. A low current sink is able to drive the gate voltage to high negative values, enabling the device to turn OFF quickly and efficiently. Figure 1 shows a typical circuit using the IPW60R299CPFKSA1 in a sink driver configuration. A pull-up resistor should be added in order to prevent the gate from unintentionally going below the threshold voltage.

Figure 1: Typical circuit using the IPW60R299CPFKSA1 in a sink driver configuration

In terms of thermal performance, the IPW60R299CPFKSA1 is rated to handle power levels up to 100 watts. This device can handle up to 10 volts at 8A (continuous) or up to 20 volts at 4A (continuous). With its low on-resistance, this device is also very efficient in terms of power dissipation. User should pay close attention to the power dissipation when running this device, as it is critical to ensure an optimal thermal performance.

Conclusion

The IPW60R299CPFKSA1 is a single N-Channel Enhancement Mode Power MOSFET, commonly used in low side switching applications. This device offers high switching speed and very low gate charge, making it suitable for a wide range of applications such as automotive, consumer, telecommunications, industrial, medical, and audio/video applications. User should pay attention to the application of the device and the power dissipation when running this device, in order to ensure optimal performance.

The specific data is subject to PDF, and the above content is for reference