BFP460E6327HTSA1 Discrete Semiconductor Products

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BFP460E6327HTSA1 Application Field and Working Principle

Transistors - Bipolar (BJT) - RF are a type of semiconductor device widely used for their electronic switch and amplifier capabilities. The BFP460E6327HTSA1 is a NPN Small Signal RF transistor, a device especially designed for use in general purpose amplifier and switching applications operating at frequencies extending up to 1GHz. It is manufactured on Comspan’s IC-Friendly (R) 30V Silicon in a tiny 2 x 1.0 x 0.3mm 8L-CSP package. Highly optimized NPN profiles provide superior transconductance gain, great linearity and excellent efficiency while maintaining low extraneous noise. The SiGe HBT process allows the use of multiple vias that connect the back of the process to the power and ground planes, resulting in superior power efficiency, thermal performance and greatly reduced crosstalk with adjacent components.

Application Field

The BFP460E6327HTSA1 is designed for applications operating at frequencies extending up to 1GHz, such as general-purpose amplifier and switching applications. It could be used in a wide variety of electronic equipment including cellular telephones, portable communications, satellite receivers, low power amplifier designs and RF switching applications for cellular infrastructure.

Working Principle

The BFP460E6327HTSA1 works based on the following principles. The bipolar transistor (BJT) consists of three semiconductor layers that control the flow of electrical current from the base to the collector and from the collector to the emitter. Operating at nanosecond speeds, E-B breakdown voltage and junction temperature compensation allows for constant current performance over a wide range of operating conditions. Whenever the base voltage rises above a certain level, the transistor switches on at high speeds and starts conducting current between the collector and emitter until the base voltage falls below a certain level, at which point the transistor switches off.

The BFP460E6327HTSA1 operates through the application of a DC bias voltage applied to the base-emitter junction of the transistor, which generates an electric field that causes current to flow from the base to the emitter. This field controls the amount of current that flows from the collector to the emitter. The transistor\'s transconductance is determined by the voltage drop across its base-collector junction, which determines the amount of current flowing from the base to the emitter.

In summary, the BFP460E6327HTSA1 is a great NPN small signal RF transistor designed for general-purpose amplifier and switching applications. It is manufactured on Comspan’s IC-Friendly (R) 30V Silicon in a tiny 2 x 1.0 x 0.3mm 8L-CSP package. It operates by applying DC bias voltage to the base-emitter junction of the transistor and transconductance is determined by the voltage drop across its base-collector junction.

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