BC850BWE6327HTSA1 Allicdata Electronics
Allicdata Part #:

BC850BWE6327HTSA1TR-ND

Manufacturer Part#:

BC850BWE6327HTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS NPN 45V 0.1A SOT-323
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 250MHz 250m...
DataSheet: BC850BWE6327HTSA1 datasheetBC850BWE6327HTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Base Part Number: BC850
Description

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Introduction

BC850BWE6327HTSA1, is a single bipolar junction transistor (BJT). Bipolar junction transistors (BJTs) are semiconductor devices primarily used for amplifying and switching electronic signals. BJTs are divided into two basic types, NPN and PNP transistors. BC850BWE6327HTSA1 is an NPN type, meaning that it consists of two P-doped semiconductor layers sandwiching an N-doped layer. The P-doped layers are the emitter and collector regions of the transistor, while the N-doped layer is the base.

Application Field of BC850BWE6327HTSA1

The BC850BWE6327HTSA1 is a versatile and widely used transistor, and is found in many different types of applications. Its size, low cost, and ease of use make it a popular choice. It is commonly used in power amplifiers for radio and television receivers, and can also be used for switching applications. It can be used to control a large current flow with a smaller current and voltage, allowing it to be used as a switch or amplifier.

Working Principle of BC850BWE6327HTSA1

BC850BWE6327HTSA1 works by applying a voltage to the base of the transistor. This voltage, which is usually small, triggers a much larger current to flow between the emitter and collector. This larger current can be used to control a larger current in a load. To switch the transistor on or off, the voltage applied to the base is changed.When the base voltage is low, the current between the emitter and collector is small and the transistor is ‘off’. When the base voltage is increased, the current between the emitter and collector increases and the transistor is ‘on’. This can be used to control a larger current in a load, allowing the transistor to be used as a switch. The transistor can also be used to amplify a signal. When a signal is applied to the base, it will cause a change in the current between the emitter and collector, producing an amplified output signal. The current between the emitter and collector can also be controlled by applying a small current to the base, allowing the transistor to be used as an amplifier.

Conclusion

BC850BWE6327HTSA1 is an extremely versatile single bipolar junction transistor (BJT). It can be used in a wide range of applications, such as power amplifiers and switching circuits, due to its small size, low cost, and ease of use. Its working principle is based on the application of a voltage to the base of the transistor, which triggers a larger current to flow between the emitter and collector, allowing it to be used as either a switch or an amplifier.

The specific data is subject to PDF, and the above content is for reference

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