BSS138WH6327XTSA1

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BSS138WH6327XTSA1 is a single N-channel logic level MOSFET (metal oxide semiconductor field effect transistor). It is developed and manufactured by NXP Semiconductors, a leading semiconductor firm based in the Netherlands. This transistor is used for applications ranging from switching and amplifying circuits to powering small loads.

Application Fields

The BSS138WH6327XTSA1 is often used in low-current applications such as logic level switching or analog signal switching. It is an ideal choice for current-sinking and voltage-switching applications because of its 0.35V max gate threshold voltage and 50V max drain source voltage. Other applications include high-side load switches, pre-drivers for RF applications, and charge pumps. The transistor is also suitable for driving LED displays.

Working Principle

The BSS138WH6327XTSA1 transistor is a voltage-controlled device. It utilizes the conductive property of electrons in a semiconductor material. The gate, source and drain terminals allow current to flow between them and the transistor functions as a switch. The gate terminal is used to control the flow of current. When the gate voltage increases, it attracts the conducting electrons and turn them on, allowing current to flow from the source to the drain through the transistor’s N-type material. When the gate voltage is decreased, electrons are repelled and the current is stopped.

With its fast switching speed, low on-resistance, and low gate charge, the BSS138WH6327XTSA1 is an ideal choice for low-power applications that require fast switching capabilities. In addition, it features low gate-charge and has a low input capacitance. These features ensure the device operates efficiently and reliably for quiet and smooth operation.

Conclusion

The BSS138WH6327XTSA1 is a single N-Channel logic level MOSFET transistor designed by NXP Semiconductors. It is suitable for a wide range of low-current applications, including logic level switching, high-side load switches, analog signal switching, pre-drivers, and charge pumps. Its 0.35V max gate threshold voltage and 50V max drain source voltage make it an ideal choice for voltage-switching applications. The transistor operates by utilizing the conductive properties of electrons, allowing current to flow when the gate voltage is increased.

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