IPD50P04P413ATMA1

The IPD50P04P413ATMA1 is a single N-Channel MOSFET, also known as a Metal Oxide Semiconductor FET, that is specifically designed to provide efficient and reliable power management. This device is a specifically designed highly reliable and low on-resistance power MOSFET, ideal for applications such as load switching and hot swap. The device is packaged in a very small 3mm x 3mm, 6-channel SMT (Surface Acoustic Wave) package, making it ideal for compact, space saving designs.

Application Field

The IPD50P04P413ATMA1 has several applications, but is mainly used for DC/DC converters, response time control, power switching, load and unload devices, and motor control. This device can be used in a variety of digital and analogue systems, such as computers, printers, machines and industrial control systems.

Working Principle

The IPD50P04P413ATMA1 uses a single MOSFET, which is a type of transistor. A MOSFET is a field-effect transistor consisting of three main terminals - a Drain, Source, and Gate terminal. When a voltage is applied to the source and drain, a channel is created between them. This channel is used to allow current to flow. The Gate terminal is used to control the flow of electricity. When the Gate is “on”, the channel between the Source and Drain is opened, allowing current to flow. The device acts as an electrical switch by Digital Inputs, allowing the current to be alternately turned on and off.

The IPD50P04P413ATMA1 uses an N-Channel MOSFET, which consists of a P-type substrate and an N-type zone containing a channel. When the Gate voltage is applied, the electric field induces electrons from the N-type zone to move, thus creating a conducting channel. This allows current to flow from the Source to the Drain.

Advantages

The IPD50P04P413ATMA1 is designed for high efficiency power management, with a maximum drain-source voltage (VDS) of 50V and a low on-resistance of 97mΩ, which is excellent for load switching applications. The device is also able to function under extremely high frequency, offering up to 10A continuously. Furthermore, the device is very small and light, allowing designers to fit it in tight spaces.

Conclusion

The IPD50P04P413ATMA1 is a single N-Channel MOSFET designed for high efficiency power management. It has a maximum VDS of 50V and a low on-resistance of 97mΩ, which make it suitable for load switching applications. With its small size, light weight, and ability to function at high frequencies, the IPD50P04P413ATMA1 is an ideal solution for space saving designs.