
Allicdata Part #: | IRFU9024NPBF-ND |
Manufacturer Part#: |
IRFU9024NPBF |
Price: | $ 0.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 55V 11A I-PAK |
More Detail: | P-Channel 55V 11A (Tc) 38W (Tc) Through Hole IPAK ... |
DataSheet: | ![]() |
Quantity: | 5912 |
1 +: | $ 0.70000 |
10 +: | $ 0.67900 |
100 +: | $ 0.66500 |
1000 +: | $ 0.65100 |
10000 +: | $ 0.63000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 175 mOhm @ 6.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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?The IRFU9024NPBF is a N-channel, depletion-mode MOSFET that is constructed of silicon and operates at a voltage of 25V. It is a popular choice as it is compact, consumes very little power and offers excellent reliability, making it suitable for a variety of applications.
In terms of application fields, the IRFU9024NPBF is the most commonly used depletion-mode MOSFET for many applications including analog circuits, power electronics and CMOS based systems. It is also used extensively in automotive and industrial control systems. Furthermore, it is often used in conjunction with other MOSFETs to create voltage and current switching circuits.
In terms of its working principle, the IRFU9024NPBF is a voltage-controlled, depletion-mode MOSFET. This means that the MOSFET is normally ON and requires a voltage to turn it OFF. When a voltage is applied to the gate of the MOSFET, it creates an inversion region in the P-type material underneath the gate, which creates a depletion of electrons in the N-region, turning the MOSFET OFF. This is the basic principle behind many MOSFET transistors.
The IRFU9024NPBF is a popular choice for a wide range of applications due to its low power consumption, compact size and excellent reliability. It is also suitable for both analog and digital circuits, and can be used in conjunction with other MOSFETs to create powerful voltage and current switching circuits.
In summary, the IRFU9024NPBF is an N-channel, depletion-mode MOSFET that is suitable for a variety of applications. It is a popular choice as it offers excellent reliability, consumes very little power, and is compact in size. Its working principle is based on the concept of voltage-controlled depletion in the P-type material underneath the gate which causes electrons in the N-region to be depleted, thus turning the MOSFET OFF when a voltage is applied to the gate. As such, it is a popular choice for any application requiring a reliable and efficient MOSFET.
The specific data is subject to PDF, and the above content is for reference
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