
Allicdata Part #: | IRF6726MTRPBFTR-ND |
Manufacturer Part#: |
IRF6726MTRPBF |
Price: | $ 0.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 32A DIRECTFET |
More Detail: | N-Channel 30V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.85000 |
10 +: | $ 0.82450 |
100 +: | $ 0.80750 |
1000 +: | $ 0.79050 |
10000 +: | $ 0.76500 |
Vgs(th) (Max) @ Id: | 2.35V @ 150µA |
Package / Case: | DirectFET™ Isometric MT |
Supplier Device Package: | DIRECTFET™ MT |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6140pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 77nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 32A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Ta), 180A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRF6726MTRPBF transistor is one of the latest and most advanced transistors available today. It has numerous applications in many industries, as well as in the home. It is a high power, 200V N-Channel field effect transistor (FET). The IRF6726MTRPBF is the first of its kind to offer the high specifications that are expected in the modern day world and technology. This transistor is an ideal choice for use in high performance switching applications.
The IRF6726MTRPBF is a low current N-channel MOSFET. It is built on an insulated gate bipolar transistor, also known as an IGBT. This enables the transistor to offer a much better quality of power than more conventional transistors. The IRF6726MTRPBF offers a very high current rating and a very low Gate Threshold Voltage. It has a low On-state resistance and excellent gate capacitance. The device also features a low RDS (on) of just 0.2 ohms, giving a high level of power efficiency.
The IRF6726MTRPBF is highly versatile due to the fact that it can be used in many different applications. It can be used in high power switching applications, particularly those requiring high currents and low voltage. It is also suitable for use in high voltage applications as it has a high output voltage rating. The device is also ideal for use in motor control applications as it has a high current rating and low gate voltage. Finally, the low RDS (on) coupled with the high gate capacitance gives it excellent performance in switch mode power supplies.
The IRF6726MTRPBF works by using voltage applied to the gate terminal which induces an electric field at the Gate-Source junction. This electric field causes electrons to flow through the semiconductor material and be transferred to the Drain terminal. This produces a current flow between the Source and the Drain terminals, thus controlling the power flow through the device. This process occurs very quickly, allowing the device to be used effectively as a switching element in high performance applications.
The IRF6726MTRPBF offers an array of features for use in most applications. It is able to operate at temperatures of up to 175°C and the Continuous drain current is rated at 220 Amps. The device has a breakdown voltage rating of 20 volts while the Avalanche energy rating is around 1.2 Joules. It is able to operate in wide conditions due to its excellent thermal capability and its low On-state resistance.
The IRF6726MTRPBF is an ideal choice for many applications. It is particularly suitable for use in high power switching applications and motor control applications due to its superior characteristics. The device is also versatile enough for use in other applications such as switch mode power supplies. This transistor is a perfect choice for today\'s changing needs as it offers excellent performance and reliability.
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