IRF6726MTRPBF Allicdata Electronics
Allicdata Part #:

IRF6726MTRPBFTR-ND

Manufacturer Part#:

IRF6726MTRPBF

Price: $ 0.85
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 32A DIRECTFET
More Detail: N-Channel 30V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (...
DataSheet: IRF6726MTRPBF datasheetIRF6726MTRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.85000
10 +: $ 0.82450
100 +: $ 0.80750
1000 +: $ 0.79050
10000 +: $ 0.76500
Stock 1000Can Ship Immediately
$ 0.85
Specifications
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Package / Case: DirectFET™ Isometric MT
Supplier Device Package: DIRECTFET™ MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6140pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRF6726MTRPBF transistor is one of the latest and most advanced transistors available today. It has numerous applications in many industries, as well as in the home. It is a high power, 200V N-Channel field effect transistor (FET). The IRF6726MTRPBF is the first of its kind to offer the high specifications that are expected in the modern day world and technology. This transistor is an ideal choice for use in high performance switching applications.

The IRF6726MTRPBF is a low current N-channel MOSFET. It is built on an insulated gate bipolar transistor, also known as an IGBT. This enables the transistor to offer a much better quality of power than more conventional transistors. The IRF6726MTRPBF offers a very high current rating and a very low Gate Threshold Voltage. It has a low On-state resistance and excellent gate capacitance. The device also features a low RDS (on) of just 0.2 ohms, giving a high level of power efficiency.

The IRF6726MTRPBF is highly versatile due to the fact that it can be used in many different applications. It can be used in high power switching applications, particularly those requiring high currents and low voltage. It is also suitable for use in high voltage applications as it has a high output voltage rating. The device is also ideal for use in motor control applications as it has a high current rating and low gate voltage. Finally, the low RDS (on) coupled with the high gate capacitance gives it excellent performance in switch mode power supplies.

The IRF6726MTRPBF works by using voltage applied to the gate terminal which induces an electric field at the Gate-Source junction. This electric field causes electrons to flow through the semiconductor material and be transferred to the Drain terminal. This produces a current flow between the Source and the Drain terminals, thus controlling the power flow through the device. This process occurs very quickly, allowing the device to be used effectively as a switching element in high performance applications.

The IRF6726MTRPBF offers an array of features for use in most applications. It is able to operate at temperatures of up to 175°C and the Continuous drain current is rated at 220 Amps. The device has a breakdown voltage rating of 20 volts while the Avalanche energy rating is around 1.2 Joules. It is able to operate in wide conditions due to its excellent thermal capability and its low On-state resistance.

The IRF6726MTRPBF is an ideal choice for many applications. It is particularly suitable for use in high power switching applications and motor control applications due to its superior characteristics. The device is also versatile enough for use in other applications such as switch mode power supplies. This transistor is a perfect choice for today\'s changing needs as it offers excellent performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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