Storage interface codec - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TL1L2-NW1LTR-ND	TL1L2-NW1,L	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Cool CCT (K): 5000K Flux @ 25C, Current - Test: 130 lm (115 lm ~ 145 lm) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.85V Lumens/Watt @ Current - Test: 130 lm/W CRI (Color Rendering Index): 80 Current - Max: 1A Viewing Angle: 120 Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.080" (2.03mm) Thermal Resistance of Package: 12C/W	1000 Order	1+: $0
TLP183(BLLE-ND	TLP183(BLL,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C	1000 Order	125+: $0.1552
TK12A80WS4X-ND	TK12A80W,S4X	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 4V @ 570A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 300V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	253 Order	1+: $2.2743 50+: $1.8257 100+: $1.6635 500+: $1.347 1000+: $1.136
SSM6J207FELFTR- ND	SSM6J207FE,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSII Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 251 mOhm @ 650mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ES6 (1.6x1.6) Package / Case: SOT-563, SOT-666	1000 Order	4000+: $0.0873
2SC3138-Y(TE85L F)TR-ND	2SC3138-Y(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	1000 Order	1+: $0
RN1442ATE85LFTR -ND	RN1442ATE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 30MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	1+: $0
2SC2229(TE6SAN1 FM-ND	2SC2229(TE6SAN1 F,M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
1SS361FVL3F(TTR -ND	1SS361FV,L3F(T	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	8000+: $0.0198
TLP5214(D4-TPET R-ND	TLP5214(D4-TP,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/s Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 32ns, 18ns Current - Output High, Low: 3A, 3A Current - Peak Output: 4A Voltage - Forward (Vf) (Typ): 1.7V (Max) Current - DC Forward (If) (Max): 25mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40C ~ 110C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SO Approvals: CQC, CSA, cUL, UL, VDE	1500 Order	1500+: $2.2829
TLP2451A(F)-ND	TLP2451A(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 20kV/s Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 350ns Rise / Fall Time (Typ): 50ns, 50ns Current - Output High, Low: 400mA, 400mA Current - Peak Output: 600mA Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Approvals: CSA, cUL, UL	40 Order	1+: $1.1277 10+: $0.9167 25+: $0.7051
TLP183(GB-TPLET R-ND	TLP183(GB-TPL,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 4 Leads Supplier Device Package: 6-SO, 4 Lead	45000 Order	3000+: $0.08 6000+: $0.0728 15000+: $0.0679 30000+: $0.0655 75000+: $0.0631
TLP185(GBSE-ND	TLP185(GB,SE	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	125+: $0.1635
RN1130MFVL3FTR- ND	RN1130MFV,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	8000+: $0.0198
TC74HC4052AFTEL CT-ND	TC74HC4052AFTEL	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Number of Circuits: 2 On-State Resistance (Max): 100 Ohm Channel-to-Channel Matching (Ron): 5 Ohm Voltage - Supply, Single (V+): 2 V ~ 6 V Voltage - Supply, Dual (V): 2 V ~ 6 V Switch Time (Ton, Toff) (Max): 18ns, 29ns (Typ) -3db Bandwidth: 140MHz Channel Capacitance (CS(off), CD(off)): 2pF, 40pF Current - Leakage (IS(off)) (Max): 100nA Crosstalk: -50dB @ 1MHz Operating Temperature: -40C ~ 85C (TA) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP Base Part Number: 74HC4052	1000 Order	1+: $0
74HC32DTR-ND	74HC32D	Toshiba Semiconductor and Storage	View more Series: 74HC Packaging: Tape & Reel (TR) Part Status: Active Logic Type: OR Gate Number of Circuits: 4 Number of Inputs: 2 Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1A Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Supplier Device Package: 14-SOIC Package / Case: 14-SOIC (0.154", 3.90mm Width)	2500 Order	--
TC74AC573FW-ELP TR-ND	TC74AC573FW-ELP	Toshiba Semiconductor and Storage	View more Series: TC74AC Packaging: Tape & Reel (TR) Part Status: Obsolete Logic Type: D-Type Transparent Latch Circuit: 8:8 Output Type: Tri-State Voltage - Supply: 2 V ~ 5.5 V Independent Circuits: 1 Delay Time - Propagation: 6.2ns Current - Output High, Low: 75mA, 75mA Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.209", 5.30mm Width) Supplier Device Package: 20-SOL Base Part Number: 74AC573	1000 Order	1+: $0
TC74VHC74FTELMT R-ND	TC74VHC74FTELM	Toshiba Semiconductor and Storage	View more Series: TC74VHC Packaging: Tape & Reel (TR) Part Status: Obsolete Function: Set(Preset) and Reset Type: D-Type Output Type: Differential Number of Elements: 2 Number of Bits per Element: 1 Clock Frequency: 115MHz Max Propagation Delay @ V, Max CL: 9.3ns @ 5V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Iq): 2A Input Capacitance: 4pF Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Base Part Number: 74VHC74	1000 Order	1+: $0
TC7S86FUT5LFTTR -ND	TC7S86FUT5LFT	Toshiba Semiconductor and Storage	View more Series: TC7S Packaging: Tape & Reel (TR) Part Status: Obsolete Logic Type: XOR (Exclusive OR) Number of Circuits: 1 Number of Inputs: 2 Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1A Current - Output High, Low: 2.6mA, 2.6mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353 Base Part Number: 7S86	1000 Order	1+: $0
RN2102LF(CTTR-N D	RN2102,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	3000+: $0.0228
ULN2803AFWGCELT R-ND	ULN2803AFWG,C,E L	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500A, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 1.31W Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 18-SOIC (0.295", 7.50mm Width) Supplier Device Package: 18-SOL Base Part Number: ULN280*A	1000 Order	1+: $0
TC74VHC164FTELM TR-ND	TC74VHC164FTELM	Toshiba Semiconductor and Storage	View more Series: TC74VHC Packaging: Tape & Reel (TR) Part Status: Obsolete Logic Type: Shift Register Output Type: Push-Pull Number of Elements: 1 Number of Bits per Element: 8 Function: Serial to Parallel Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP Base Part Number: 74VHC164	1000 Order	1+: $0
TLP222A-2(LF1F) -ND	TLP222A-2(LF1,F )	Toshiba Semiconductor and Storage	View more Series: TLP222A-2 Packaging: Bulk Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) x 2 Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 60V Load Current: 500mA On-State Resistance (Max): 2 Ohms Termination Style: Gull Wing Package / Case: 8-SMD (0.300", 7.62mm) Supplier Device Package: 8-SMD	4339 Order	1+: $2.4003 10+: $2.1269 50+: $1.578 100+: $1.3722 250+: $1.235 500+: $1.0978 1000+: $0.9434 2500+: $0.8919 5000+: $0.8576
TLP170G(TP,F)-N D	TLP170G(TP,F)	Toshiba Semiconductor and Storage	View more Series: TLP170G Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 350V Load Current: 100mA On-State Resistance (Max): 50 Ohms Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm)	1000 Order	2500+: $0.4938
TLP3553(TP1F)-N D	TLP3553(TP1,F)	Toshiba Semiconductor and Storage	View more Series: TLP3553 Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.33VDC Voltage - Load: 0V ~ 20V Load Current: 3A On-State Resistance (Max): 80 mOhms Termination Style: Gull Wing Package / Case: 4-SMD (0.300", 7.62mm) Supplier Device Package: 4-SMD	1000 Order	1500+: $1.1642
TCR2EN11LFTR-ND	TCR2EN11,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.1V Current - Output: 200mA Current - Quiescent (Iq): 60A PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	1000 Order	1+: $0
TA78L10F(TE12LF )TR-ND	TA78L10F(TE12L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 35V Voltage - Output (Min/Fixed): 10V Current - Output: 150mA Current - Quiescent (Iq): 6mA Current - Supply (Max): 6.5mA PSRR: 43dB (120Hz) Protection Features: Over Current, Over Temperature Operating Temperature: -30C ~ 85C Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI (SOT-89) Base Part Number: TA78L	1000 Order	1+: $0
HN2D03F(TE85LF) TR-ND	HN2D03F(TE85L,F )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 3 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 100A @ 400V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
TK6A55DA(STA4QM )-ND	TK6A55DA(STA4,Q ,M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.48 Ohm @ 2.8A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Power Dissipation (Max): 35W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $0.8723
TK8A10K3S5Q-ND	TK8A10K3,S5Q	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V Power Dissipation (Max): 18W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	33 Order	1+: $1.1214
CMS03CT-ND	CMS03(TE12L)	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 500A @ 30V Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40C ~ 150C Base Part Number: CMS03	1000 Order	1+: $0
DF2S6.2CTL3FTR- ND	DF2S6.2CT,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 5V Voltage - Breakdown (Min): 5.8V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2	1000 Order	10000+: $0.0172 30000+: $0.0155 50000+: $0.0138 100000+: $0.0129 250000+: $0.0115
2SA1020-Y(T6FJT AF-ND	2SA1020-Y(T6FJT ,AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA1931NETQ(M-N D	2SA1931,NETQ(M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SC2235-YT6KEHF (M-ND	2SC2235-Y,T6KEH F(M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC5459(TOJSQM) -ND	2SC5459(TOJS,Q, M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.2A Current - Collector Cutoff (Max): 100A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 5V Power - Max: 2W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
CRS15I40A(TE85L QM-ND	CRS15I40A(TE85L ,QM	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1.5A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 60A @ 40V Capacitance @ Vr, F: 35pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150C (Max)	1000 Order	3000+: $0.083
RN1417(TE85LF)T R-ND	RN1417(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	1+: $0
RN1409LFTR-ND	RN1409,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	3000+: $0.0219
RN1511(TE85LF)T R-ND	RN1511(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	1000 Order	1+: $0
RN2502(TE85LF)T R-ND	RN2502(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	1000 Order	1+: $0

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