
Allicdata Part #: | TK12A80WS4X-ND |
Manufacturer Part#: |
TK12A80W,S4X |
Price: | $ 2.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 800V 11.5A TO220SIS |
More Detail: | N-Channel 800V 11.5A (Ta) 45W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 253 |
1 +: | $ 2.27430 |
50 +: | $ 1.82574 |
100 +: | $ 1.66345 |
500 +: | $ 1.34699 |
1000 +: | $ 1.13602 |
Vgs(th) (Max) @ Id: | 4V @ 570µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 300V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 450 mOhm @ 5.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.5A (Ta) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK12A80W,S4X is a single n-channel MOSFET - also known as a Metal Oxide Semiconductor Field Effect Transistor. This particular type of transistor is the most commonly used in today’s digital systems. Generally speaking, MOSFETs operate with a gate that is isolated from the source and drain, allowing for an electric field to be applied to these components. This causes the flow of current through the transistor to be controlled by the gate. The TK12A80W,S4X MOSFET is a three-terminal device with the Source, Drain, and Gate as the three terminals.The TK12A80W,S4X MOSFET is designed to provide low on-resistance, drive capability, and fast switching times - making it ideal for use in volume- and high-frequency switching applications. This MOSFET also provides superior accuracy, making it perfect for a number of precision applications, such as data analysis and audio production. In terms of its application field, the TK12A80W,S4X can be found in a wide range of digital circuits. It is also suitable for various types of switch and amplifier applications, including power amplifiers, linear amplifiers, and high-power switching. The working principle of the TK12A80W,S4X involves the application of a voltage to the gate of the transistor. This causes a charge to build up in the gate, which in turn creates an electric field across the source and drain. This electric field affects the flow of current through the transistor, allowing it to be controlled. This is the basic principle behind all MOSFETs. The TK12A80W,S4X is designed to meet a number of demanding technical requirements. It is capable of operating at high frequencies and can handle high currents. It is also designed to tolerate high temperature environments, making it suitable for use in a range of industrial applications. Furthermore, the TK12A80W,S4X is constructed with a rugged casing to provide a high level of reliability and long-term performance.Overall, the TK12A80W,S4X is an incredibly versatile single n-channel MOSFET specifically designed for high-frequency, high-current applications. It is capable of providing superior accuracy and reliability, making it ideal for a wide range of digital systems. The TK12A80W,S4X is able to operate efficiently in a variety of temperature and voltage conditions, making it perfect for industrial and other high-demand applications.
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