TK12A80W,S4X Allicdata Electronics
Allicdata Part #:

TK12A80WS4X-ND

Manufacturer Part#:

TK12A80W,S4X

Price: $ 2.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 800V 11.5A TO220SIS
More Detail: N-Channel 800V 11.5A (Ta) 45W (Tc) Through Hole TO...
DataSheet: TK12A80W,S4X datasheetTK12A80W,S4X Datasheet/PDF
Quantity: 253
1 +: $ 2.27430
50 +: $ 1.82574
100 +: $ 1.66345
500 +: $ 1.34699
1000 +: $ 1.13602
Stock 253Can Ship Immediately
$ 2.5
Specifications
Vgs(th) (Max) @ Id: 4V @ 570µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Mounting Type: Through Hole
Operating Temperature: 150°C
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 300V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: DTMOSIV
Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TK12A80W,S4X is a single n-channel MOSFET - also known as a Metal Oxide Semiconductor Field Effect Transistor. This particular type of transistor is the most commonly used in today’s digital systems. Generally speaking, MOSFETs operate with a gate that is isolated from the source and drain, allowing for an electric field to be applied to these components. This causes the flow of current through the transistor to be controlled by the gate. The TK12A80W,S4X MOSFET is a three-terminal device with the Source, Drain, and Gate as the three terminals.The TK12A80W,S4X MOSFET is designed to provide low on-resistance, drive capability, and fast switching times - making it ideal for use in volume- and high-frequency switching applications. This MOSFET also provides superior accuracy, making it perfect for a number of precision applications, such as data analysis and audio production. In terms of its application field, the TK12A80W,S4X can be found in a wide range of digital circuits. It is also suitable for various types of switch and amplifier applications, including power amplifiers, linear amplifiers, and high-power switching. The working principle of the TK12A80W,S4X involves the application of a voltage to the gate of the transistor. This causes a charge to build up in the gate, which in turn creates an electric field across the source and drain. This electric field affects the flow of current through the transistor, allowing it to be controlled. This is the basic principle behind all MOSFETs. The TK12A80W,S4X is designed to meet a number of demanding technical requirements. It is capable of operating at high frequencies and can handle high currents. It is also designed to tolerate high temperature environments, making it suitable for use in a range of industrial applications. Furthermore, the TK12A80W,S4X is constructed with a rugged casing to provide a high level of reliability and long-term performance.Overall, the TK12A80W,S4X is an incredibly versatile single n-channel MOSFET specifically designed for high-frequency, high-current applications. It is capable of providing superior accuracy and reliability, making it ideal for a wide range of digital systems. The TK12A80W,S4X is able to operate efficiently in a variety of temperature and voltage conditions, making it perfect for industrial and other high-demand applications.

The specific data is subject to PDF, and the above content is for reference

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