RN1409,LF Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	S-Mini

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Introduction

RN1409, commonly known as a Single Pre-Biased Bipolar Transistor, is a modern semiconductor device used mainly in electrical and electronic equipment applications. It has been designed and developed to provide both an efficient and a robust power control solution. This article is aimed at providing an overview of the RN1409, its application field and its working principle.

Application Field

The RN1409 can be used as an electronic switch, amplifier, and/or modulator, depending on its use. It is suitable for applications ranging from voltage and current amplification, high voltage power supplies, motor control, and circuit efficiency measurement. The RN1409 can be used in low-power operation, medium-power applications, and even in high-power applications where conventional bipolar transistors or gate turn-off thyristors are not applicable. Furthermore, it can be used in medium (greater then 1 kW) and high (>1 kW) power applications where long switching times and low switching losses are desired.

Working Principle

The RN1409 is a high voltage, high current rated, high quality bipolar transistor. It is designed with a pre-biased structure, with an integrated PN junction. The external power supply must provide a constant voltage of at least 28 V for normal operation. This voltage is applied to the base of the transistor to forward bias the PN junction, allowing current to flow through the collector and emitter terminals. When current flows through the transistor, the base voltage of the device is reduced due to the voltage drop across the base diode. This reduces the forward bias, resulting in a decrease in collector current and an increase in emiter current. The emitter then supplies the output current to the external load. It is important to note that when the RN1409 is used in an application that requires a high current pulse duration, the resistor value of the external base circuit should be increased in order to reduce the voltage drop across the base diode. This will result in higher collector current and higher transistor power efficiency.

Conclusion

The RN1409 is a reliable and efficient power control solution for various electrical and electronic applications. It can be used in medium and high power applications due to its high voltage and current rating and reliable pre-biased design. The working principle of the RN1409 is based on applying a forward biased voltage to the base of the transistor, which then reduces the base voltage due to the voltage drop across the base diode and allows current to flow through the transistor. By increasing the resistor value of the external base circuit when high current pulses are needed, the RN1409 can provide increased output current and higher power efficiency.

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