Allicdata Part #: | 2SC2229(TE6SAN1FM-ND |
Manufacturer Part#: |
2SC2229(TE6SAN1F,M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 50MA 150V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 150V 50mA 120MHz 800m... |
DataSheet: | 2SC2229(TE6SAN1F,M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Power - Max: | 800mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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The 2SC2229 (TE6SAN1F,M) is a single bipolar transistor that has been designed for general purpose use in the field of electronics. The 2SC2229 is a low power, high voltage NPN silicon, transistor designed to provide high current gain and high collector-to-emitter breakdown voltage. This transistor is part of the 2SC2229 family of transistors, which includes five types of transistors with varying features such as current gains and package sizes, allowing a range of applications to be addressed. This transistor is designed to handle 50V collector voltage, a 60V (Vcc - Vceo) breakdown voltage, and up to 15A collector current. This makes it suitable for use in a variety of applications such as audio output stages, switching circuits, logic level power switching circuits, and power amplifiers.
The 2SC2229 transistor is able to operate in a wide range of temperatures between -55°C to +150°C. This makes it an ideal choice for applications that are exposed to extreme temperatures, such as automotive and aerospace applications. This transistor is also RoHS compliant and lead-free, making it a safe and reliable choice for environment friendly applications.
The transistor consists of three electrodes, the Base, Collector, and Emitter. The base is connected to a voltage source, the collector is connected to an output load, and the emitter is connected to ground. The current gain of the 2SC2229 is very high at hfe=20, compared to low power transistors. This allows the current gain to be easily adjusted by varying the base current. When the base current is increased, the collector-emitter saturation current (Ics) increases, resulting in increased output power.
The working principle of the 2SC2229 transistor is simple. When a voltage is applied to the base, current starts to flow from the base to the collector, creating an electrically controlled current path. This current path is regulated by the base current, allowing current to be controlled easily. When the voltage applied to the base increases, the current flow increases, resulting in higher current flow and power output.
In addition to its excellent current gain and high breakdown voltage, the 2SC2229 transistor has several additional benefits. For example, it has a small package size, making it suitable for space-constrained applications. Furthermore, it is a low-cost transistor and is widely available. Finally, it is easy to use, allowing it to be used in a variety of applications with minimal setup.
The 2SC2229 transistor is a versatile and reliable single bipolar transistor that is suitable for a variety of electronic applications. Its high current gain and wide operating temperature range make it an ideal choice for power applications. Additionally, its small package size, low cost, and ease of use make it an excellent choice for applications where space, cost, and/or ease of use are factors. Therefore, the 2SC2229 is a reliable and cost effective transistor for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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