2SA1020-Y(T6FJT,AF Allicdata Electronics
Allicdata Part #:

2SA1020-Y(T6FJTAF-ND

Manufacturer Part#:

2SA1020-Y(T6FJT,AF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 2A 50V TO226-3
More Detail: Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T...
DataSheet: 2SA1020-Y(T6FJT,AF datasheet2SA1020-Y(T6FJT,AF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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The 2SA1020-Y (T6FJT,AF) is a type of single bipolar transistor which is used in various applications. The transistor is also known as an NPN transistor, and its purpose is to amplify current by converting small collector current into a larger emitter current. The 2SA1020-Y (T6FJT,AF) is an NPN bipolar, epitaxial transistor. This means the emitter, base, and collector layers of the transistor are formed on the same semiconductor substrate. The 2SA1020-Y (T6FJT,AF) is typically used in switching, amplifying, and frequency control applications.

In terms of application fields, the 2SA1020-Y (T6FJT,AF) transistor is quite versatile. It can be used in many types of circuits including radio frequency (RF) amplifiers, oscillators, switching circuits, and analog applications. It is also often used in power switches, audio amplifiers, and voltage regulators. This type of transistor is especially useful in circuits with high frequency and high current capabilities. Due to its low cost, it is often found in consumer electronics.

The working principle of the 2SA1020-Y (T6FJT,AF) is quite simple. This type of transistor is used for current amplification by converting small signals at the collector terminal into larger signals at the emitter terminal. It works by having the base terminal be modulated by an external voltage source, which then changes the collector-emitter current flow. The exact mechanism of operation varies depending on the current and voltage values present in the circuit, but the fundamentals are the same.

In order to understand the working principle of the 2SA1020-Y (T6FJT,AF) further, it is important to understand how the transistor acts as a switch. This type of transistor is used for switching by having the base current control the current flowing through the collector-emitter junction. When the base current is increased, it increases the current flow through the collector-emitter junction, which in turn switches the transistor “on”. When the base current is reduced, the current through the collector-emitter junction is also reduced, which switches the transistor off.

In addition, the 2SA1020-Y (T6FJT,AF) transistor is also used in amplifying circuits. This type of transistor amplifies the input signal by converting a small input current into a larger output current. It is often used in circuits where high frequency and high current capabilities are required. The working principle of the 2SA1020-Y (T6FJT,AF) in this application is similar to its application as a switch, but the difference is that the amplifier amplifies not only the collector-emitter voltage, but also the gain of the circuit.

Overall, the 2SA1020-Y (T6FJT,AF) is a versatile and reliable single bipolar transistor. It is often used in various applications including RF amplifiers, oscillators, switching circuits, analog circuits, and power switches. The transistor works by electronically controlling the current flow between the collector and the emitter, and can be used for both switching and amplifying purposes. This type of transistor is especially useful in circuits with high frequency and high current capabilities.

The specific data is subject to PDF, and the above content is for reference

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