RN1442ATE85LF Allicdata Electronics
Allicdata Part #:

RN1442ATE85LFTR-ND

Manufacturer Part#:

RN1442ATE85LF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.2W S-MINI
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1442ATE85LF datasheetRN1442ATE85LF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Resistor - Base (R1): 10 kOhms
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 30MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Series: --
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 300mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RN1442ATE85LF, classified as transistors - bipolar (BJT) - single, pre-biased, is typically used as a medium-power switch in applications where load current can range from a few hundred milliamps to 1.5 amps. It works by using a small current to control a larger current, thereby allowing many possibilities for controlling electrical signals and power. While the maximum voltage is rated at 30 V, it can also be used to construct amplifier circuits of higher voltages and power. This article explores the mechanism, applications and advantages of Bipolar junction transistors (BJT) and the special characteristics of the RN1442ATE85LF.

BJT is widely used as an amplifier and switch. It has three terminals, namely the collector, base and emitter, and is made of either an n-p-n or p-n-p structure. When the input signal (base-to-emitter voltage) is greater than the “cut-off voltage”, current will flow from the emitter to the collector, making it act as a switch. When the base-to-emitter voltage is below the cut-off voltage, BJT will act as an amplifier, which means its output voltage is proportional to the input voltage.

As a single, pre-biased transistor, the RN1442ATE85LF can be used in low power applications where a small amount of current is needed to control a larger amount of current. It features high gain, low noise figure and low power consumption. Moreover, it has a maximum working current of 1.5 A and can work at up to 30 V. It also offers excellent stability when making or breaking connections.

The RN1442ATE85LF is used in various electrical and electronic circuits, including power amplifiers and DC-DC converters. In these circuits, it functions as an amplifier or switch. In the amplifier circuit, its base-emitter diode acts as a variable resistor. When a current is applied to the base-emitter diode, it will alter the amplification factor of the amplifier. This enables the amplifier to have greater control over the gain of the output signal.

DC-DC converters, on the other hand, use the RN1442ATE85LF as switches. These switched-mode converters operate by steering a current to the load at a variable frequency using an oscillator. The oscillator is connected to the base of the transistor, while the collector is connected to the input voltage. The transistor acts as an electrically controlled switch and hence the voltage is regulated to the required level.

Apart from these applications, the RN1442ATE85LF can be used in applications requiring controlled power input and switching, such as automotive lighting and relay applications. It can also be used as a control or protection device for various electrical circuits. It is also commonly used in audio amplifiers and TV tuners.

Overall, the RN1442ATE85LF is a highly versatile transistor that can be used in a wide range of applications, from low-power switches to medium-power amplifiers and DC-DC converters. Its low power consumption, high gain, low noise and excellent stability make it an ideal choice for those who require a reliable and cost-effective solution. For these reasons, this transistor has become the preferred choice for many projects.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RN14" Included word is 40
Part Number Manufacturer Price Quantity Description
RN143-6-02-1M8 Schaffner EM... 2.04 $ 580 CMC 1.8MH 6A 2LN TH1.8mH ...
RN1414,LF Toshiba Semi... 0.02 $ 3000 TRANS PREBIAS NPN 0.2W S-...
RN1401,LF Toshiba Semi... 0.03 $ 9000 TRANS PREBIAS NPN 0.2W S-...
RN1402,LF Toshiba Semi... 0.03 $ 6000 TRANS PREBIAS NPN 0.2W S-...
RN1406,LF Toshiba Semi... 0.03 $ 6000 TRANS PREBIAS NPN 0.2W S-...
RN1413(TE85L,F) Toshiba Semi... 0.02 $ 3000 TRANS PREBIAS NPN 0.2W SM...
RN1404S,LF Toshiba Semi... 0.03 $ 3000 TRANS PREBIAS NPN 0.2W S-...
RN1405,LF Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS NPN 0.2W S-...
RN1441ATE85LF Toshiba Semi... 0.04 $ 3000 TRANS PREBIAS NPN 0.2W S-...
RN1415(TE85L,F) Toshiba Semi... 0.05 $ 3000 TRANS PREBIAS NPN 0.2W S-...
RN1408,LF(B Toshiba Semi... 0.02 $ 1000 TRANS PREBIAS NPN 50V 0.2...
RN1442ATE85LF Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS NPN 0.2W S-...
RN142-0.5-02 Schaffner EM... 0.0 $ 1000 CMC 82MH 500MA 2LN TH82mH...
RN142-1.4-02 Schaffner EM... 0.0 $ 1000 CMC 27MH 1.4A 2LN TH27mH ...
RN142-1-02 Schaffner EM... 0.0 $ 1000 COMMON MODE CHOKE 33MH 1A...
RN142-2-02 Schaffner EM... 0.0 $ 1000 CMC 6.8MH 2A 2LN TH6.8mH ...
RN142-4-02 Schaffner EM... 0.0 $ 1000 CMC 3.3MH 4A 2LN TH3.3mH ...
RN143-0.5-02 Schaffner EM... 0.0 $ 1000 CMC 100MH 500MA 2LN TH100...
RN143-1-02 Schaffner EM... 0.0 $ 1000 COMMON MODE CHOKE 47MH 1A...
RN143-2-02 Schaffner EM... 0.0 $ 1000 COMMON MODE CHOKE 10MH 2A...
RN143-4-02 Schaffner EM... 0.0 $ 1000 CMC 3.9MH 4A 2LN TH3.9mH ...
RN143-6-02 Schaffner EM... 0.0 $ 1000 CMC 1.8MH 6A 2LN TH1.8mH ...
RN142-6-02 Schaffner EM... 3.2 $ 5 CMC 1.8MH 6A 2LN TH1.8mH ...
RN142VTE-17 ROHM Semicon... 0.06 $ 1000 DIODE PIN 60V UMDRF Diode...
RN141GT2R ROHM Semicon... 0.08 $ 1000 DIODE PIN HF SW 50V 100MA...
RN142ZS8ATE61 ROHM Semicon... 0.21 $ 1000 DIODE PIN HF SW 30V 50MA ...
RN142ZS12ATE61 ROHM Semicon... 0.29 $ 1000 DIODE PIN HF SW 30V 50MA ...
RN142-6-02-1M8 Schaffner EM... 2.06 $ 1399 CMC 1.8MH 6A 2LN TH1.8mH ...
RN143-0.5-02-100M Schaffner EM... 1.87 $ 147 CMC 100MH 500MA 2LN TH100...
RN142-1.4-02-27M Schaffner EM... 1.89 $ 498 CMC 27MH 1.4A 2LN TH27mH ...
RN142-1-02-33M Schaffner EM... 1.89 $ 270 CMC 33MH 1A 2LN TH33mH @ ...
RN142-2-02-6M8 Schaffner EM... 1.89 $ 200 CMC 6.8MH 2A 2LN TH6.8mH ...
RN142-0.5-02-82M Schaffner EM... 1.89 $ 186 CMC 82MH 500MA 2LN TH82mH...
RN142-4-02-3M3 Schaffner EM... 1.97 $ 200 CMC 3.3MH 4A 2LN TH3.3mH ...
RN143-1-02-47M Schaffner EM... 2.0 $ 234 CMC 47MH 1A 2LN TH47mH @ ...
RN143-4-02-3M9 Schaffner EM... 2.04 $ 145 CMC 3.9MH 4A 2LN TH3.9mH ...
RN1409,LF Toshiba Semi... 0.02 $ 1000 TRANS PREBIAS NPN 50V 0.2...
RN1403,LF Toshiba Semi... 0.03 $ 1000 X34 PB-F S-MINI PLN (LF) ...
RN1404,LF Toshiba Semi... 0.03 $ 1000 X34 PB-F S-MINI PLN (LF) ...
RN1421TE85LF Toshiba Semi... 0.06 $ 1000 TRANS PREBIAS NPN 200MW S...
Latest Products
PDTD113EK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD113EK,115 Allicdata Electronics
PDTC144WS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTC144WS,126 Allicdata Electronics
PDTD123YS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123YS,126 Allicdata Electronics
PDTD123TS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123TS,126 Allicdata Electronics
PDTD123TK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD123TK,115 Allicdata Electronics
PDTD123ES,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123ES,126 Allicdata Electronics