Allicdata Part #: | RN1442ATE85LFTR-ND |
Manufacturer Part#: |
RN1442ATE85LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 0.2W S-MINI |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1442ATE85LF Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Resistor - Base (R1): | 10 kOhms |
Supplier Device Package: | S-Mini |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 30MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 3mA, 30mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 4mA, 2V |
Series: | -- |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Current - Collector (Ic) (Max): | 300mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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RN1442ATE85LF, classified as transistors - bipolar (BJT) - single, pre-biased, is typically used as a medium-power switch in applications where load current can range from a few hundred milliamps to 1.5 amps. It works by using a small current to control a larger current, thereby allowing many possibilities for controlling electrical signals and power. While the maximum voltage is rated at 30 V, it can also be used to construct amplifier circuits of higher voltages and power. This article explores the mechanism, applications and advantages of Bipolar junction transistors (BJT) and the special characteristics of the RN1442ATE85LF.
BJT is widely used as an amplifier and switch. It has three terminals, namely the collector, base and emitter, and is made of either an n-p-n or p-n-p structure. When the input signal (base-to-emitter voltage) is greater than the “cut-off voltage”, current will flow from the emitter to the collector, making it act as a switch. When the base-to-emitter voltage is below the cut-off voltage, BJT will act as an amplifier, which means its output voltage is proportional to the input voltage.
As a single, pre-biased transistor, the RN1442ATE85LF can be used in low power applications where a small amount of current is needed to control a larger amount of current. It features high gain, low noise figure and low power consumption. Moreover, it has a maximum working current of 1.5 A and can work at up to 30 V. It also offers excellent stability when making or breaking connections.
The RN1442ATE85LF is used in various electrical and electronic circuits, including power amplifiers and DC-DC converters. In these circuits, it functions as an amplifier or switch. In the amplifier circuit, its base-emitter diode acts as a variable resistor. When a current is applied to the base-emitter diode, it will alter the amplification factor of the amplifier. This enables the amplifier to have greater control over the gain of the output signal.
DC-DC converters, on the other hand, use the RN1442ATE85LF as switches. These switched-mode converters operate by steering a current to the load at a variable frequency using an oscillator. The oscillator is connected to the base of the transistor, while the collector is connected to the input voltage. The transistor acts as an electrically controlled switch and hence the voltage is regulated to the required level.
Apart from these applications, the RN1442ATE85LF can be used in applications requiring controlled power input and switching, such as automotive lighting and relay applications. It can also be used as a control or protection device for various electrical circuits. It is also commonly used in audio amplifiers and TV tuners.
Overall, the RN1442ATE85LF is a highly versatile transistor that can be used in a wide range of applications, from low-power switches to medium-power amplifiers and DC-DC converters. Its low power consumption, high gain, low noise and excellent stability make it an ideal choice for those who require a reliable and cost-effective solution. For these reasons, this transistor has become the preferred choice for many projects.
The specific data is subject to PDF, and the above content is for reference
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