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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
RN1904FELF(CTTR -ND	RN1904FE,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	4000 Order	4000+: $0.041
RN1609(TE85LF)T R-ND	RN1609(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
2SA2154MFV-GR(T PL3TR-ND	2SA2154MFV-GR(T PL3	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	1+: $0
RN2111LF(CBTR-N D	RN2111,LF(CB	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	3000+: $0.0228
RN2116LF(CTTR-N D	RN2116,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	3000+: $0.0228
2SD2406-Y(F)-ND	2SD2406-Y(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A Current - Collector Cutoff (Max): 30A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V Power - Max: 25W Frequency - Transition: 8MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SC2229-O(SHP1F M-ND	2SC2229-O(SHP1, F,M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2655-YT6F(J- ND	2SC2655-Y,T6F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
TK380A60YS4X-ND	TK380A60Y,S4X	Toshiba Semiconductor and Storage	View more Series: DTMOSV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 4V @ 360A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 300V Power Dissipation (Max): 30W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	90 Order	1+: $1.0143 50+: $0.8114 100+: $0.71 500+: $0.5506 1000+: $0.4347
TP89R103NLLQTR- ND	TP89R103NL,LQ	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Power Dissipation (Max): 1W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.2022
TPCA8003-H(TE12 LQM-ND	TPCA8003-H(TE12 LQM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
74HC74DTR-ND	74HC74D	Toshiba Semiconductor and Storage	View more Series: 74HC Packaging: Tape & Reel (TR) Part Status: Active Function: Set(Preset) and Reset Type: D-Type Output Type: Differential Number of Elements: 2 Number of Bits per Element: 1 Clock Frequency: 67MHz Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Iq): 2A Input Capacitance: 5pF Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width)	2500 Order	--
74HC245DTR-ND	74HC245D	Toshiba Semiconductor and Storage	View more Series: 74HC Packaging: Tape & Reel (TR) Part Status: Active Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Number of Bits per Element: 8 Output Type: 3-State Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40C ~ 125C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SOIC Base Part Number: CRZ33	2000 Order	--
TC7SET04FULJ(CT TR-ND	TC7SET04FU,LJ(C T	Toshiba Semiconductor and Storage	View more Series: TC7SET Packaging: Tape & Reel (TR) Part Status: Active Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Max): 2A Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353 Base Part Number: 7SET04	1000 Order	3000+: $0.0378 6000+: $0.034 15000+: $0.0302 30000+: $0.0284 75000+: $0.0251 150000+: $0.0242
TC7WT125FULF-ND	TC7WT125FU,LF	Toshiba Semiconductor and Storage	View more Series: TC7WT Part Status: Active Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 1 Output Type: 3-State Current - Output High, Low: 6mA, 6mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: SM8	1000 Order	3000+: $0.0738
TC7SH86FSTPL3TR -ND	TC7SH86FSTPL3	Toshiba Semiconductor and Storage	View more Series: TC7SH Packaging: Tape & Reel (TR) Part Status: Obsolete Logic Type: XOR (Exclusive OR) Number of Circuits: 1 Number of Inputs: 2 Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2A Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Supplier Device Package: fSV Package / Case: SOT-953 Base Part Number: 7SH86	1000 Order	1+: $0
DF2B7AFSL3MTR-N D	DF2B7AFS,L3M	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 5.5V (Max) Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 20V Current - Peak Pulse (10/1000s): 4A (8/20s) Power - Peak Pulse: 80W Power Line Protection: No Capacitance @ Frequency: 8.5pF @ 1MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923	1000 Order	10000+: $0.0159 30000+: $0.0143 50000+: $0.0127 100000+: $0.0119 250000+: $0.0106
TB7109F(TE12LQ) -ND	TB7109F(TE12L,Q )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Applications: Converter, LNB Voltage - Input: 8 V ~ 27 V Number of Outputs: 2 Voltage - Output: Adjustable Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-SOP Advance (5x5) Base Part Number: TB7109	1000 Order	1+: $0
TCR3UG25BLFTR-N D	TCR3UG25B,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.5V Voltage Dropout (Max): 0.327V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680nA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Inrush Current, Over Current, Thermal Shutdown Operating Temperature: -40C ~ 85C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WCSP-F (0.65x0.65)	5000 Order	5000+: $0.0771 10000+: $0.0722 25000+: $0.0662 50000+: $0.0637
TLWF1109(T11(OT R-ND	TLWF1109(T11(O	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 3 (168 Hours) Color: White Millicandela Rating: 3200mcd Lens Style/Size: Oval with Flat Top Voltage - Forward (Vf) (Typ): 3.5V Current - Test: 40mA Mounting Type: Surface Mount Package / Case: 4-SMD, J-Lead Size / Dimension: 3.20mm L x 2.90mm W Height (Max): 2.10mm Base Part Number: 1109	1000 Order	1+: $0
TL1L4-NW0LTR-ND	TL1L4-NW0,L	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Cool CCT (K): 5000K Flux @ 85C, Current - Test: 145 lm (130 lm ~ 160 lm) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 148 lm/W CRI (Color Rendering Index): 70 Current - Max: 1.5A Viewing Angle: 120 Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.085" (2.15mm) Thermal Resistance of Package: 5C/W	1000 Order	1+: $0
CRH01CT-ND	CRH01(TE85L)	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10A @ 200V Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40C ~ 150C Base Part Number: CRH01	1000 Order	--
SSM3K123TULFTR- ND	SSM3K123TU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSIII Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 4V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	6000 Order	3000+: $0.0956
TK7A65WS5X-ND	TK7A65W,S5X	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 780 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	244 Order	1+: $1.2096 50+: $0.9745 100+: $0.877 500+: $0.6821 1000+: $0.5652
2SC2383-Y(T6DNS FM-ND	2SC2383-Y(T6DNS ,FM	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
TK31N60XS1F-ND	TK31N60X,S1F	Toshiba Semiconductor and Storage	View more Series: DTMOSIV-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88 mOhm @ 9.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 230W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	3 Order	1+: $3.9564 30+: $3.1788 120+: $2.8962 510+: $2.3452 1020+: $1.9779
TK8S06K3L(T6L1N Q)-ND	TK8S06K3L(T6L1, NQ)	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 54 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Power Dissipation (Max): 25W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.3347
TPCC8002-H(TE12 LQMTR-ND	TPCC8002-H(TE12 LQM	Toshiba Semiconductor and Storage	View more Series: U-MOSV-H Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V Power Dissipation (Max): 700mW (Ta), 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
TLP130GBF-ND	TLP130GBF	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: AC, DC Output Type: Transistor with Base Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 100C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Supplier Device Package: 6-MFSOP, 5 Lead	1000 Order	150+: $0.5847
SSM6N7002KFULFT R-ND	SSM6N7002KFU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 300mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power - Max: 285mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.03
RN4985LF(CTTR-N D	RN4985,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100A (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.0304 6000+: $0.0265 15000+: $0.0225 30000+: $0.0212 75000+: $0.0198 150000+: $0.0176
RN2504(TE85LF)T R-ND	RN2504(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	1000 Order	1+: $0
HN1B04FU-GRLFTR -ND	HN1B04FU-GR,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 150MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.038
ULN2803APGCN-ND	ULN2803APG,CN	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Obsolete Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500A, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 1.47W Operating Temperature: -40C ~ 85C (TA) Mounting Type: Through Hole Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP Base Part Number: ULN280*A	1000 Order	1+: $0
RN2118(T5LFT)TR -ND	RN2118(T5L,F,T)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	1+: $0
RN1906(T5LFT)TR -ND	RN1906(T5L,F,T)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
TC7USB42MULFTR- ND	TC7USB42MU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Applications: USB Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Number of Channels: 2 On-State Resistance (Max): 14 Ohm Voltage - Supply, Single (V+): 2.3 V ~ 4.3 V -3db Bandwidth: 1.5GHz Features: USB 2.0 Operating Temperature: -40C ~ 85C (TA) Package / Case: 10-UFQFN Supplier Device Package: 10-UQFN (1.8x1.4)	1000 Order	3000+: $0.0977
TLP265J(V4E-ND	TLP265J(V4,E	Toshiba Semiconductor and Storage	View more Part Status: Active Output Type: Triac Zero Crossing Circuit: No Number of Channels: 1 Voltage - Isolation: 3750Vrms Voltage - Off State: 600V Static dV/dt (Min): 500V/s (Typ) Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 70mA Current - Hold (Ih): 1mA (Typ) Turn On Time: 20s Voltage - Forward (Vf) (Typ): 1.27V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40C ~ 100C Approvals: CQC, cUR, UR, VDE	1000 Order	125+: $0.3171
TLP293-4(LGBTPE TR-ND	TLP293-4(LGBTP, E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 500A Current Transfer Ratio (Max): 600% @ 500A Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	1000 Order	2000+: $0.2876 6000+: $0.2811 10000+: $0.2703
TLP290(GR-TPSET R-ND	TLP290(GR-TP,SE	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm Width) Supplier Device Package: 4-SO	1000 Order	2500+: $0.0709 5000+: $0.0644 12500+: $0.0602 25000+: $0.058 62500+: $0.0559

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