SSM6N7002KFU,LF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	300mA
Rds On (Max) @ Id, Vgs:	1.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	40pF @ 10V
Power - Max:	285mW
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	US6

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SSM6N7002KFU,LF Application Field and Working Principle

The SSM6N7002KFU,LF integrated devices are MOSFET arrays, which enable circuit designers to protect the transistor from damage caused by extra high or low voltages and currents by distributing the drain current through multiple transistors. The MOSFET consists of several isolated MOSFETs with a common source, gate and drain connection, which is why it is known as a "MOSFET array".MOSFETs are metal-oxide-semiconductor field-effect transistors. As opposed to traditional bipolar transistors, they permit current to pass through the gate, allowing voltage to control the resistance of the channel between the source and the drain. MOSFETs are found in almost all electronic designs today, due to their low cost, high speed and wide range of applications. The SSM6N7002KFU,LF applications include: load switching, relay and solenoid driving, motor switching, power supply sequencing, voltage clamping and spike suppression. It is versatile in that it can handle high currents of up to 60V, making it suitable for a variety of applications.The MOSFET array employs a common ground for all transistors, which eliminates the need for multiple output switches. This provides designers with a simpler, low cost, and more stable solution. The array has a low on-resistance and fast switching speed and is powerful enough to handle the high current demands of high-performance devices such as digital signal processors and automotive applications.The working principle behind the MOSFET array is that the input section of the array consists of a series of transistors, each of which is connected across the drain and source, with all of the gates connected to a common voltage (V_GS). When V_GS is applied to the gate, the threshold voltage (V_th) is reached and current flows through the transistor, turning it on. When the V_GS is removed, the transistor is turned off. By controlling the input of currents to the transistors, it is possible to regulate the total amount of current flowing through the array and eliminate the need for a large single transistor, which would otherwise be needed to achieve the same purpose.The SSM6N7002KFU,LF MOSFET array offers the designer a cost efficient solution, which provides high current handling capability while preserving the efficiency of the device. It is suitable for applications such as switching, motor control and power supply sequencing, which require fast switching speeds and low on-resistance capability.

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