Allicdata Part #: | 2SC2229-O(SHP1FM-ND |
Manufacturer Part#: |
2SC2229-O(SHP1,F,M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 50MA 150V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 150V 50mA 120MHz 800m... |
DataSheet: | 2SC2229-O(SHP1,F,M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Power - Max: | 800mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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2SC2229-O, or SHP1,F,M, is a single bipolar junction transistor (BJT). This transistor, like all other transistors, is the base of modern integrated circuit (IC) technology. Its operation is essential for applications such as amplification and switching, and it is widely used in today\'s electronics.
A bipolar junction transistor (BJT) is created from a combination of three layers of semiconductor material. It has two connection points, the base and the emitter, which are connected through a silicon-based substrate. The third connection point, the collector, is connected to the base through a thin layer of electrically conductive material known as the base-collector junction. When a current is applied to the base, a corresponding current flows through the collector, allowing the transistor to amplify or switch electrical signals.
A 2SC2229-O transistor has two important parameters that dictate its usage: current gain and power dissipation. Current gain is the ratio of current flow through the collector to current applied at the base. Power dissipation is the maximum operating power that can be applied to the transistor before it becomes unstable or damaged. The 2SC2229-O has a current gain of 140 and a power dissipation of 1 watt.
The most common use of the 2SC2229-O is for low-power amplification, switching, and voltage regulation in consumer electronics. It is also used as a logic buffer or as a driver for discrete components, providing a strong and reliable signal for electronic components such as transistors, resistors, and capacitors. The 2SC2229-O is also used in radio frequency (RF) applications, such as modules for cordless phones, automotive radios, and satellite systems.
The working principle of the 2SC2229-O is based on its ability to regulate the flow of electrical signals. When the voltage at the base of the transistor is higher than the voltage at the emitter, it creates an electrical field that attracts electrons in the collector to the base, thereby creating a current that is amplified by the transistor. In this way, the 2SC2229-O amplifies small electrical signals and makes them larger, allowing them to be used for a variety of applications.
In addition to its amplifying and switching capabilities, the 2SC2229-O also offers additional features to enhance its performance. It has a frequency response range of up to 500 KHz, and it can be used in circuits operating at up to 175V DC. It is also resistant to thermal shock, making it a reliable transistor in harsh industrial environments.
The 2SC2229-O is a versatile and reliable transistor that is used in countless applications. As technology continues to evolve, the 2SC2229-O will remain a significant component in the development of modern electronics.
The specific data is subject to PDF, and the above content is for reference
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