| Allicdata Part #: | RN2118(T5LFT)TR-ND |
| Manufacturer Part#: |
RN2118(T5L,F,T) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS PNP 0.1W SSM |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: | RN2118(T5L,F,T) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 47 kOhms |
| Resistor - Emitter Base (R2): | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | 200MHz |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-75, SOT-416 |
| Supplier Device Package: | SSM |
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The RN2118 (T5L,F,T) is a Pre-Biased Bipolar Junction Transistor (BJT) designed specifically to fit the needs of current specific applications. Pre-Biasing is a method of transistor operation which is used to reduce distortion and provide on-chip voltage regulation. Pre-Biasing can also be used to improve power efficiency, reduce start up time, and increase performance.
The RN2118 (T5L,F,T) is a single integrated device that combines pre-biasing, protection and thermal control of both the collector and emitter nodes. This allows for improved multi-layer integration and improved reliability as compared to other BJTs. The RN2118 (T5L,F,T) is suitable for a wide range of applications including switching, power management, rectification, and drive and control for many industries such as aerospace, automotive, medical and industrial.
The RN2118 (T5L,F,T) is a high performance transistor, using advanced self-biasing technology. This method of pre-biasing is a method where a voltage is added to the collector to bias the transistor and to reduce ripple and minimize distortion. This self-biasing is accomplished without the need for external components. The transistor comes in a small, low profile package suitable for space constrained applications like mobile phones and laptops.
The RN2118 (T5L,F,T) is a versatile device, with a high input impedance and low output impedance, making it suitable for a wide range of applications. The device also features an adjustable oscillation frequency that can range from 50kHz to 500kHz. This adjustable frequency, combined with the high input impedance, makes it suitable for driving high sensitivity loads.
The RN2118 (T5L,F,T) has a high reverse breakdown voltage, allowing it to function at higher voltages without any damage to the device. This high reverse breakdown voltage also makes it suitable for use in applications that require very low voltage drop, such as active-clamp rectifiers and power supply monitoring. Additionally, the device has a wide working temperature range, from -40°C to 125°C, making it suitable for use in harsh environment.
The RN2118 (T5L,F,T) is a versatile BJT device with a wide range of applications and a wide temperature range. The device also features a wide variety of features, such as adjustable oscillation frequency and high reverse breakdown voltage. These features make the RN2118 (T5L,F,T) an ideal choice for applications where pre-biasing, protection, and thermal control are required.
The specific data is subject to PDF, and the above content is for reference
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RN2118(T5L,F,T) Datasheet/PDF