RN1609(TE85L,F) Allicdata Electronics
Allicdata Part #:

RN1609(TE85LF)TR-ND

Manufacturer Part#:

RN1609(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2NPN PREBIAS 0.3W SM6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: RN1609(TE85L,F) datasheetRN1609(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6
Description

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Bipolar junction transistors (BJT) have been one of the most important parts of many electronics applications and they have been used in nearly all domains of electronics, from optical devices to power management. The RN1609 (TE85L,F) is a type of pre-biased BJT array that has been used in a variety of applications. In this article, we will discuss the application fields of RN1609 (TE85L,F) and its working principles in detail.

1. Application Fields

The RN1609 (TE85L,F) is a type of pre-biased BJT array that has very good characteristics when it comes to speed, effectiveness and stability. This type of BJT array has been used in various applications ranging from radio-frequency (RF) and wireless communication systems to audio electronics systems. It has also been used in high-power circuits, where the load current must be very accurately controlled. In addition, it has been widely used in amplifiers, timers, and even smart meter. Furthermore, due to its fast switching speed, low power dissipation, and excellent matching capability, it has found application in various industrial and medical equipment as well.

2. Working Principle

The RN1609 (TE85L,F) is a pre-biased BJT array that utilizes a positive feedback circuit to maintain a constant quiescent current. In this circuit, two or three transistors are connected in series between two voltage options, and the quiescent current is determined by the base current within the positive feedback circuit. This in turn regulates the collector current of the BJT array, allowing a very precise control over the output current.

The RN1609 (TE85L,F) also provides excellent temperature control performance and very stable operation. This is achievable due to its high input impedance, which ensures that no excess current from the external sources is fed into the BJT array. Furthermore, it ensures that the quiescent current remains constant over various temperatures and operating conditions.

Moreover, the RN1609 (TE85L,F) also features a low power dissipation that makes it suitable for many low-power applications. The low power dissipation also ensures that the BJT array will not overheat when it is operating under load. This makes it an ideal choice for applications that require both high-efficiency and low power dissipation.

Finally, the RN1609 (TE85L,F) possesses excellent impedance matching, which enables it to produce high output levels with minimal distortion. This feature also makes it suitable for use in audio amplification circuits, where the output needs to be maintained at a certain level with minimal distortion.

In summary, the pre-biased BJT array RN1609 (TE85L,F) is a highly versatile and reliable device that was created to operate over a wide temperature range and with minimal power dissipation. It has a wide range of application fields, such as RF and wireless communication systems, audio electronics systems, high-power circuits, amplifiers, timers, and smart meters. Also, it features a positive feedback circuit, a high input impedance, and excellent impedance matching.

The specific data is subject to PDF, and the above content is for reference

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