Storage logic trigger - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
2SB1375CLARIONF (M-ND	2SB1375,CLARION F(M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A Current - Collector Cutoff (Max): 10A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 2W Frequency - Transition: 9MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SK2544(F)-ND	2SK2544(F)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Power Dissipation (Max): 80W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
CRZ11(TE85LQM)- ND	CRZ11(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active Voltage - Zener (Nom) (Vz): 11V Tolerance: 10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10A @ 7V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5)	1000 Order	3000+: $0.1118
CMS21(TE12LQM)- ND	CMS21(TE12L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active	1000 Order	3000+: $0.1107
CMS09DKR-ND	CMS09(TE12L)	Toshiba Semiconductor and Storage	View more Packaging: Digi-Reel Part Status: Discontinued at Digi-Key Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 500A @ 30V Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40C ~ 150C Base Part Number: CMS09	1000 Order	1+: $0
TLEGF1100C(T11( OTR-ND	TLEGF1100C(T11( O	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 3 (168 Hours) Color: Green Millicandela Rating: 700mcd Lens Style/Size: Oval with Flat Top Voltage - Forward (Vf) (Typ): 3.2V Current - Test: 20mA Mounting Type: Surface Mount Wavelength - Dominant: 528nm Wavelength - Peak: 518nm Package / Case: 2-SMD, J-Lead Supplier Device Package: SMD Size / Dimension: 3.20mm L x 2.90mm W Height (Max): 2.40mm Base Part Number: 1100	1000 Order	1+: $0
TC7W66FULFTR-ND	TC7W66FU,LF	Toshiba Semiconductor and Storage	View more Series: TC7W Packaging: Tape & Reel (TR) Part Status: Active Type: Bilateral, FET Switches Circuit: 1 x 1:1 Independent Circuits: 2 Voltage Supply Source: Single Supply Voltage - Supply: 2 V ~ 12 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: SM8 Base Part Number: 7W66	6000 Order	3000+: $0.0717 6000+: $0.0674 15000+: $0.063 30000+: $0.0578 75000+: $0.0556
TLP185(TPRSE-ND	TLP185(TPR,SE	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	3000+: $0.0736
TB62218AFG8ELTR -ND	TB62218AFG,8,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Motor Type - Stepper: Bipolar Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: DMOS Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 2A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs Supplier Device Package: 28-HSOP	1000 Order	1000+: $0.6486
TB6617FNG(OEL)T R-ND	TB6617FNG(O,EL)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel Technology: Power MOSFET Applications: General Purpose Current - Output: 1A Voltage - Supply: 2.7 V ~ 5.5 V Voltage - Load: 4.5 V ~ 45 V Operating Temperature: -20C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 16-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-SSOP	1000 Order	1+: $0
TB62754AFNGTR-N D	TB62754AFNG(O,E L)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Type: DC DC Controller Topology: Step-Up (Boost) Internal Switch(s): Yes Number of Outputs: 6 Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 5.5V Current - Output / Channel: 48mA Frequency: 1.6MHz Dimming: PWM Applications: Backlight Operating Temperature: -40C ~ 95C (TA) Mounting Type: Surface Mount Package / Case: 20-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-SSOP Base Part Number: TB62754A	1000 Order	1+: $0
TL1WK-LL1LCSTR- ND	TL1WK-LL1,LCS	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Warm CCT (K): 2700K Flux @ 25C, Current - Test: 19 lm (Typ) Current - Test: 60mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 110 lm/W CRI (Color Rendering Index): 80 Current - Max: 180mA Viewing Angle: 165 Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SMD Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm) Height - Seated (Max): 0.015" (0.39mm) Thermal Resistance of Package: 17C/W JS	1000 Order	1+: $0
TLP3545A(F-ND	TLP3545A(F	Toshiba Semiconductor and Storage	View more Series: TLP3545A Packaging: Tube Part Status: Active Mounting Type: Through Hole Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.64VDC Voltage - Load: 0V ~ 60V Load Current: 4A On-State Resistance (Max): 60 mOhms Termination Style: PC Pin Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP	1000 Order	1+: $2.2554 10+: $2.1124 25+: $1.8774 50+: $1.7835 100+: $1.6897 250+: $1.5019 500+: $1.4081 1000+: $1.3142
TLP197DF-ND	TLP197D(F)	Toshiba Semiconductor and Storage	View more Series: TLP197D Packaging: Tube Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 200V Load Current: 200mA On-State Resistance (Max): 8 Ohms Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm)	1000 Order	75+: $1.2377
TLP3109(F-ND	TLP3109(F	Toshiba Semiconductor and Storage	View more Series: TLP3100 Packaging: Tube Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.33VDC Voltage - Load: 0V ~ 100V Load Current: 2A On-State Resistance (Max): 70 mOhms Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm)	1000 Order	75+: $1.79
DF2B29FUH3FTR-N D	DF2B29FU,H3F	Toshiba Semiconductor and Storage	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 24V Voltage - Breakdown (Min): 26V Voltage - Clamping (Max) @ Ipp: 47V Current - Peak Pulse (10/1000s): 3A (8/20s) Power - Peak Pulse: 140W Power Line Protection: No Applications: Automotive Capacitance @ Frequency: 9pF @ 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USC	9000 Order	3000+: $0.041 6000+: $0.0369 15000+: $0.0328 30000+: $0.0308 75000+: $0.0273
TLP5702(TPE-ND	TLP5702(TP,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 1A Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Rise / Fall Time (Typ): 15ns, 8ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40C ~ 110C	1000 Order	1500+: $0.9329
TLP185(GB-TPRSE -ND	TLP185(GB-TPR,S E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	3000+: $0.0736
TLP2303(TPRE-ND	TLP2303(TPR,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 500% @ 5mA Input Type: DC Output Type: Transistor Voltage - Output (Max): 18V Current - Output / Channel: 80mA Current - DC Forward (If) (Max): 20mA Operating Temperature: -40C ~ 125C	1000 Order	3000+: $0.1746
TB6593FNGTR-ND	TB6593FNG(O,EL)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: PWM Technology: Power MOSFET Applications: General Purpose Current - Output: 1A Voltage - Supply: 2.7 V ~ 5.5 V Voltage - Load: 2.5 V ~ 13.5 V Operating Temperature: -20C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 20-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-SSOP Base Part Number: TB6593	1000 Order	1+: $0
TLP291(GRE)-ND	TLP291(GR,E)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 7s, 7s Rise / Fall Time (Typ): 4s, 7s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm Width) Supplier Device Package: 4-SO	1000 Order	1+: $0
TC62D748CFGCELB -ND	TC62D748CFG,C,E L,B	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Type: Linear Topology: Shift Register Internal Switch(s): Yes Number of Outputs: 16 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 17V Current - Output / Channel: 90mA Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 24-SOP (0.236", 6.00mm Width) Supplier Device Package: 24-SSOP	1000 Order	1+: $0
RN1109LF(CT-ND	RN1109,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	3000+: $0.0228
RN2904LF(CTTR-N D	RN2904,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.032
CRG07(TE85LQM)- ND	CRG07(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 700mA Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 10A @ 400V Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 175C (Max)	1000 Order	3000+: $0.0572
DSF05S30U(TPH3, F)-ND	DSF05S30U(TPH3, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 500mA Speed: Fast Recovery = 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125C (Max)	1000 Order	1+: $0
CMH05A(TE12LQM) TR-ND	CMH05A(TE12L,Q, M)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10A @ 400V Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40C ~ 150C Base Part Number: CMH05	1000 Order	1+: $0
CLS01(TE16LPASQ )-ND	CLS01(TE16L,PAS ,Q)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 530pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT Supplier Device Package: L-FLAT (4x5.5) Operating Temperature - Junction: -40C ~ 125C	1000 Order	1+: $0
TRS16N65DS1F-ND	TRS16N65D,S1F	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io) (per Diode): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 90A @ 650V Operating Temperature - Junction: 175C (Max) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	1000 Order	30+: $4.2309
TB67B054FTGELTR -ND	TB67B054FTG,EL	Toshiba Semiconductor and Storage	View more Series: * Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Supplier Device Package: 32-VQFN (5x5)	1000 Order	4000+: $1.0055
TK12E80WS1X-ND	TK12E80W,S1X	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 4V @ 570A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 300V Power Dissipation (Max): 165W (Tc) Operating Temperature: 150C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	200 Order	1+: $2.394 50+: $1.9235 100+: $1.7526 500+: $1.4192 1000+: $1.1969
TP86R203NLLQTR- ND	TP86R203NL,LQ	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Power Dissipation (Max): 1W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.2469
2SA1721OTE85LFT R-ND	2SA1721OTE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 150mW Frequency - Transition: 50MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	3000+: $0.0775
TK56A12N1S4X-ND	TK56A12N1,S4X	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 60V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	45 Order	1+: $1.5183 50+: $1.2226 100+: $1.1004 500+: $0.8558 1000+: $0.7091
TK31J60WS1VQ-ND	TK31J60W,S1VQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88 mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 230W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	27 Order	1+: $6.1236 25+: $5.0201 100+: $4.5303 500+: $3.7957
TK90S06N1LLQTR- ND	TK90S06N1L,LQ	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 2.5V @ 500A Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 10V Power Dissipation (Max): 157W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.6358
SSM3J338RLFTR-N D	SSM3J338R,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Rds On (Max) @ Id, Vgs: 17.6 mOhm @ 6A, 8V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	1000 Order	3000+: $0.0717
2SA1162S-YLFTR- ND	2SA1162S-Y,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini Base Part Number: 2SA1162	1000 Order	1+: $0
2SC2229-O(T6SHP 1FM-ND	2SC2229-O(T6SHP 1FM	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC5172(YAZKQM) -ND	2SC5172(YAZK,Q, M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 2A Current - Collector Cutoff (Max): 20A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Power - Max: 2W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0

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