TK12E80W,S1X

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The TK12E80W,S1X is a single-channel enhancement-mode power metal–oxide–semiconductor field-effect transistor (MOSFET). MOSFETs are transistors used as switches or amplifiers for high-powered applications, and are built using a three-terminal structure (gate, drain and source). The TK12E80W,S1X is a part of the family of specialized power transistors. Its die is comprised of silicon and it is surface-mounted using a leadless package with a low thermal resistance. This MOSFET is typically used as an ideal switch for applications needing high amperage and low on-resistance. It is commonly used for power management in a variety of automotive, industrial, and consumer applications, such as power switches, motor controllers, and DC–DC converters.

The TK12E80W,S1X begins operation when a voltage is applied to the “gate” pin. This voltage then attracts electrons into the gate region, thereby creating a channel. This electric field in the gate region controls the electric field in the “drain-source” region and thus alters the drain–source current. The drain–source current has two modes, enhancement and depletion, which are dependent upon the polarity of the gate voltage. If a positive gate voltage is applied, the transistor will turn on, a phenomenon known as the “enhancement” mode. Conversely, if a negative gate voltage is applied, the transistor will turn off, a phenomenon known as the “depletion” mode. Once turned on, the transistor will conduct a current between its source and drain, allowing for higher current flow.

The TK12E80W,S1X is a very well-suited MOSFET for applications that have large power requirements, such as in charge/discharge batteries, power inverters, motor controllers and also high-side current sensing. It features low gate threshold voltage, low on-resistance, 10 A continuous current and a drain-to-source breakdown voltage of 80 V. The device is capable of operating in high-temperature conditions and is fabricated using high-quality silicon wafer to ensure reliability and durability. The TK12E80W,S1X’s structure and die layout enables it to be utilized in high power applications, such as automotive, industrial, and consumer electronics without fail.

In summary, the TK12E80W,S1X is a single-channel enhancement-mode power MOSFET that is capable of offering reliable, efficient and durable performance under challenging applications. Its low threshold voltage, low on-resistance, high-current rating and breakdown voltage makes it ideal for many high-power applications that require a dependable switch. It is often used in motor controllers, power switches, DC–DC converters, charge/discharge batteries, and other industrial applications. With its high-quality but inexpensive parts, the TK12E80W,S1X MOSFET can provide the user with a cost-efficient solution that is capable of meeting its needs.

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