2SC2229-O(T6SHP1FM Allicdata Electronics
Allicdata Part #:

2SC2229-O(T6SHP1FM-ND

Manufacturer Part#:

2SC2229-O(T6SHP1FM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN 50MA 150V TO226-3
More Detail: Bipolar (BJT) Transistor NPN 150V 50mA 120MHz 800m...
DataSheet: 2SC2229-O(T6SHP1FM datasheet2SC2229-O(T6SHP1FM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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2SC2229-O(T6SHP1FM) is an NPN transistor classified as a single bipolar junction transistor (BJT). BJTs are electronic devices that are used to amplify current in many consumer electronic devices and also in some industrial applications.

A BJT typically consists of three layers of semiconductor material semiconducting material. The outer layers are called the emitter and collector, and the central layer is called the base. An input voltage is applied on the base, which results in the creation of holes and electrons in the collector and the emitter regions. These holes and electrons form a current that is amplified and flows from the collector to the emitter, which then can be used in various applications.

2SC2229-O(T6SHP1FM) is a general-purpose transistor. It is used in a wide variety of applications, including switching, audio amplification, and motor control. Due to its NPN design and relatively low voltage rating of 50 Volts, it is particularly suitable for circuits that require low power consumption.

In terms of its working principle, 2SC2229-O(T6SHP1FM) works by using the base-collector junction to create a current from the collector to the emitter. When a voltage is applied to the base, it creates a field that attracts electrons from the collector to the base. This process is known as forward bias and creates a current in the base-collector junction. This current is then amplified by the base-emitter junction, resulting in an amplified current between the collector and emitter.

2SC2229-O(T6SHP1FM) is a versatile transistor that can be used in many different applications. It has the capability to be used as a switch, amplifier and motor control, making it a great choice for low power consumption applications, such as light and power circuits. Its versatility and low voltage characteristics also make it a great choice for consumer electronics such as TVs, radios and mobile phones.

In conclusion, 2SC2229-O(T6SHP1FM) is classified as a single bipolar junction transistor and is a great choice for many consumer and industrial applications due to its versatility, low power consumption and low voltage requirements. Its working principle is based on the forward bias of the base-collector junction and the amplification of the base-emitter junction, allowing for amplified current between the collector and emitter.

The specific data is subject to PDF, and the above content is for reference

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