Allicdata Part #: | 2SK2544(F)-ND |
Manufacturer Part#: |
2SK2544(F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 600V 6A TO-220AB |
More Detail: | N-Channel 600V 6A (Ta) 80W (Tc) Through Hole TO-22... |
DataSheet: | 2SK2544(F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 10V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.25 Ohm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2SK2544(F) is a single, field-effect transistor from Toshiba\'s extensive range of complementary, symmetrical depletion MOSFETs. It has a power dissipation of 7W and is available in the TO-3P(F) package. This series of devices has combined P-channel depletion MOSFET devices with a guaranteed avalanche energy. Standard features include high transfer current, high breakdown voltage and low on-resistance.
The 2SK2544(F) is widely used in applications such as switching circuits, motor control, switching power supplies, and power circuit design. It is suited for battery-driven systems and it has a recommended maximum operating temperature of 125⁰C. This ensures that it can be safely used in even the harshest environments.
The working principle of the 2SK2544(F) is based on the design of its source and its gate structure. It consists of two p-type FETs, one on each side of the substrate. This creates two distinct regions – a source region and a drain region. The source region acts as a drain current source, while the drain region acts as a current sink. The device works by allowing a voltage to flow between the two regions when a bias voltage is applied. This flow is directed through the gate, where the current can be controlled.
The 2SK2544(F) is designed to have a high on-resistance, meaning it will experience very little resistance when it is on. It also has a high breakdown voltage, meaning it can handle higher voltages without damaging its structure. The device also has a high capacitance, meaning that current can be quickly switched on or off. This makes the device ideal for applications where high power needs to be switched quickly.
As a single field-effect transistor, the 2SK2544(F) is incredibly versatile, and is suitable for a wide range of applications. It can be used in various types of switching circuits, motor control systems, and power designs. Its high on-resistance, breakdown voltage, and capacitance make it an excellent choice for these types of applications.
The 2SK2544(F) is an excellent choice for power circuit design and switching applications. It has excellent performance characteristics, a reliable design, and a high thermal performance. This makes it a great option for those who require a device that offers the highest level of performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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