Storage logic trigger - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TLP185(BL-TPLSE TR-ND	TLP185(BL-TPL,S E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 4 Leads Supplier Device Package: 6-SO, 4 Lead	3000 Order	3000+: $0.0736 6000+: $0.0695 15000+: $0.0634 30000+: $0.0593 75000+: $0.0544
TLP293(YH-TPLET R-ND	TLP293(YH-TPL,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 75% @ 500A Current Transfer Ratio (Max): 150% @ 500A Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm Width) Supplier Device Package: 4-SO	1000 Order	2500+: $0.1029
TB62747AFGEL-ND	TB62747AFG,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Type: Linear Topology: Shift Register Internal Switch(s): Yes Number of Outputs: 16 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 26V Current - Output / Channel: 45mA Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 24-SOP (0.236", 6.00mm Width) Supplier Device Package: 24-SSOP	1000 Order	1+: $0
MT3S113TULFTR-N D	MT3S113TU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.3V Frequency - Transition: 11.2GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 12.5dB Power - Max: 900mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: UFM	6000 Order	3000+: $0.1614 6000+: $0.1533 15000+: $0.147 30000+: $0.143
CRS12(TE85L,Q,M )-ND	CRS12(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 100A @ 60V Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40C ~ 150C	1000 Order	3000+: $0.1107
RN2967(TE85LF)T R-ND	RN2967(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: US6	3000 Order	3000+: $0.0556
RN1606(TE85LF)T R-ND	RN1606(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
TCR5AM055LFTR-N D	TCR5AM055,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.55V Voltage Dropout (Max): 0.2V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): 55A Current - Supply (Max): 68A PSRR: 70dB ~ 40dB (1kHz ~ 10Hz) Control Features: Enable Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Operating Temperature: -40C ~ 85C (TJ) Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	5000 Order	5000+: $0.0822 10000+: $0.0765 25000+: $0.0726 50000+: $0.0709
TC7SPN334L6XLFT R-ND	TC7SPN334L6X,LF	Toshiba Semiconductor and Storage	View more Series: TC7SPN Packaging: Tape & Reel (TR) Part Status: Active Translator Type: Voltage Level Channel Type: Unidirectional Number of Circuits: 1 Channels per Circuit: 1 Voltage - VCCA: 1.1V ~ 2.7V Voltage - VCCB: 1.65V ~ 3.6V Output Type: Non-Inverted Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 6-UFDFN Supplier Device Package: 6-MP6C (1.45x1.0)	15000 Order	5000+: $0.0713 10000+: $0.0667 25000+: $0.0612 50000+: $0.0589
TC7MB3257CFK-EL (M)TR-ND	TC7MB3257CFK-EL (M)	Toshiba Semiconductor and Storage	View more Series: TC7MB Packaging: Tape & Reel (TR) Part Status: Obsolete Type: Multiplexer/Demultiplexer Circuit: 4 x 2:1 Independent Circuits: 1 Voltage Supply Source: Single Supply Voltage - Supply: 4 V ~ 5.5 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 16-VFSOP (0.118", 3.00mm Width) Supplier Device Package: 16-VSSOP Base Part Number: 7MB3257	2500 Order	2500+: $0.1918
TLP222GF-ND	TLP222G(F)	Toshiba Semiconductor and Storage	View more Series: TLP222G Packaging: Tube Part Status: Active Mounting Type: Through Hole Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 350V Load Current: 120mA On-State Resistance (Max): 50 Ohms Termination Style: PC Pin Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: 4-DIP	6127 Order	--
TLP3409S(TPETR- ND	TLP3409S(TP,E	Toshiba Semiconductor and Storage	View more Series: TLP3409S Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.27VDC Voltage - Load: 0V ~ 100V Load Current: 650mA On-State Resistance (Max): 600 mOhms Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.079", 2.00mm) Supplier Device Package: S-VSON4	1000 Order	2500+: $1.5374
TLP240D(LF1F-ND	TLP240D(LF1,F	Toshiba Semiconductor and Storage	View more Series: TLP240D Packaging: Tube Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.27VDC Voltage - Load: 0V ~ 200V Load Current: 250mA On-State Resistance (Max): 8 Ohms Termination Style: Gull Wing Package / Case: 4-SMD (0.300", 7.62mm) Supplier Device Package: 4-SMD	1000 Order	100+: $0.7672
TK14A45DA(STA4Q M)-ND	TK14A45DA(STA4, QM)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25C: 13.5A Rds On (Max) @ Id, Vgs: 410 mOhm @ 6.8A, 10V Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $1.5831
TK16C60WS1VQ-ND	TK16C60W,S1VQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 15.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V Vgs(th) (Max) @ Id: 3.7V @ 790A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V Power Dissipation (Max): 130W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	25 Order	1+: $3.4839
DF2S5.1FSL3MTR- ND	DF2S5.1FS,L3M	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 1.5V (Max) Voltage - Breakdown (Min): 4.8V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923	10000 Order	10000+: $0.0159 30000+: $0.0143 50000+: $0.0127 100000+: $0.0119 250000+: $0.0106
RN1426TE85LF-ND	RN1426TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 300MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini Base Part Number: RN142*	1000 Order	3000+: $0.0595
2SA1588-YLFTR-N D	2SA1588-Y,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 100mW Frequency - Transition: 200MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	3000 Order	3000+: $0.0259 6000+: $0.0225 15000+: $0.0191 30000+: $0.018 75000+: $0.0169 150000+: $0.015
HN1B04FE-YLFTR- ND	HN1B04FE-Y,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	4000+: $0.0335 8000+: $0.0291 12000+: $0.0247 28000+: $0.0233 100000+: $0.0194
2SC5066-YLFCT-N D	2SC5066-Y,LF	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	1+: $0
RN1109ACT(TPL3) TR-ND	RN1109ACT(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	1+: $0
RN2969FE(TE85LF )TR-ND	RN2969FE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	1+: $0
2SA1163-GRLFTR- ND	2SA1163-GR,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	3000+: $0.0335 6000+: $0.0291 15000+: $0.0247 30000+: $0.0233 75000+: $0.0218 150000+: $0.0194
RN2315TE85LFTR- ND	RN2315TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM Base Part Number: RN231*	3000 Order	3000+: $0.0335 6000+: $0.0291 15000+: $0.0247 30000+: $0.0233 75000+: $0.0218 150000+: $0.0194
TK9P65WRQCT-ND	TK9P65W,RQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 9.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 350A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V Power Dissipation (Max): 80W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	3872 Order	1+: $1.2978 10+: $1.1743 100+: $0.9436 500+: $0.7339 1000+: $0.6081
TK14G65WRQTR-ND	TK14G65W,RQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3.5V @ 690A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Power Dissipation (Max): 130W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.7564
RN1313(TE85LF)T R-ND	RN1313(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM Base Part Number: RN131*	1000 Order	3000+: $0.0304 6000+: $0.0265 15000+: $0.0225 30000+: $0.0212 75000+: $0.0198 150000+: $0.0176
TK3R1A04PLS4X-N D	TK3R1A04PL,S4X	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 30A, 4.5V Vgs(th) (Max) @ Id: 2.4V @ 500A Gate Charge (Qg) (Max) @ Vgs: 63.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 20V Power Dissipation (Max): 36W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	511 Order	1+: $1.26 50+: $1.018 100+: $0.9161 500+: $0.7125 1000+: $0.5904
2SC2229-O(MIT1F M)-ND	2SC2229-O(MIT1F ,M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
JDP4P02AT(TE85L )TR-ND	JDP4P02AT(TE85L )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: PIN - 2 Independent Voltage - Peak Reverse (Max): 30V Current - Max: 50mA Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz Resistance @ If, F: 1.5 Ohm @ 10mA, 100MHz Operating Temperature: 150C (TJ) Package / Case: 4-SMD, Flat Leads Supplier Device Package: CST4 (1.2x0.8)	1000 Order	1+: $0
CMS05QMTR-ND	CMS05(TE12L,Q,M )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 800A @ 30V Capacitance @ Vr, F: 330pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40C ~ 150C Base Part Number: CMS05	66000 Order	3000+: $0.1928 6000+: $0.1795 15000+: $0.1773
CES521L3FTR-ND	CES521,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 30A @ 30V Capacitance @ Vr, F: 26pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 125C (Max) Base Part Number: CES521	1000 Order	8000+: $0.0183 16000+: $0.0159 24000+: $0.0143 56000+: $0.0127 200000+: $0.0106
2SK3128(Q)-ND	2SK3128(Q)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V Power Dissipation (Max): 150W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	1000 Order	1+: $0
SSM3K318TLFCT-N D	SSM3K318T,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 107 mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 30V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
TLP385(GRH-TPLE -ND	TLP385(GRH-TPL, E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 150% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	3000+: $0.1029
TB2955HQ(O)-ND	TB2955HQ(O)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Discontinued at Digi-Key Mounting Type: Through Hole Supplier Device Package: 25-HZIP Package / Case: 25-SIP Formed Leads Base Part Number: TB2955	1000 Order	1+: $0
CTS05F40L3F-ND	CTS05F40,L3F	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 810mV @ 500mA Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 15A @ 40V Capacitance @ Vr, F: 28pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2 Operating Temperature - Junction: 150C (Max)	1000 Order	10000+: $0.0247
1SS190TE85LFTR- ND	1SS190TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3 Operating Temperature - Junction: 125C (Max)	1000 Order	1+: $0
TB62218AFNGC8EL TR-ND	TB62218AFNG,C8, EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 3 (168 Hours) Motor Type - Stepper: Bipolar Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: DMOS Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 2A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Supplier Device Package: 48-HTSSOP	1000 Order	1000+: $0.7582 2000+: $0.7059 5000+: $0.6798
TB62208FNGC8ELT R-ND	TB62208FNG,C8,E L	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 3 (168 Hours) Motor Type - Stepper: Bipolar Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: DMOS Step Resolution: 1, 1/2 Applications: General Purpose Current - Output: 1.8A Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Supplier Device Package: 48-HTSSOP	1000 Order	1000+: $0.9173

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