RN1313(TE85L,F) Allicdata Electronics

RN1313(TE85L,F) Discrete Semiconductor Products

Allicdata Part #:

RN1313(TE85LF)TR-ND

Manufacturer Part#:

RN1313(TE85L,F)

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.15W USM
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1313(TE85L,F) datasheetRN1313(TE85L,F) Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.03043
6000 +: $ 0.02646
15000 +: $ 0.02249
30000 +: $ 0.02117
75000 +: $ 0.01985
150000 +: $ 0.01764
Stock 1000Can Ship Immediately
$ 0.04
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Base Part Number: RN131*
Supplier Device Package: USM
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Bipolar Junction Transistors (BJTs) are commonly used devices in integrated circuits. They are typically used to enable, amplify or switch a signal or a current within an electrical system. A single, pre-biased BJT, such as the RN1313 (TE85LF) is a popular choice for a variety of applications.

The RN1313 (TE85LF) is a single-chip bipolar junction transistor, which features integrated circuitry allowing for pre-biased operation. It is constructed from two PNP transistors with the base and collector of the second transistor connected to the base of the first transistor. The two transistors form two junctions, known as the base-emitter and base-collector junction.

The base-emitter junction of the RN1313 (TE85LF) is biased by a small current from an external source. This provides control over the current gain of the transistor. The base-collector junction is biased by a slightly larger external voltage source, allowing for the control of the voltage amplification across the transistor. This allows the RN1313 (TE85LF) to operate more efficiently.

The RN1313 (TE85LF) is commonly used in applications such as amplifiers, attenuators, switches, digital signal processing, and radio frequency (RF) amplifiers. In an amplifier application, the transistor is used to increase the current strength of an incoming signal. By applying a small bias current to the base-emitter junction, the transistor is able to amplify the signal while controlling the current gain. When used as a switch, the RN1313 (TE85LF) can be used to switch between different currents or voltages, allowing it to be used in a variety of applications. The RN1313 (TE85LF) can also be used as an attenuator, which reduces the amplitude of an incoming signal. In this case, the small external bias current is used to reduce the gain of the transistor, allowing for more accurate signal processing.

Additionally, the RN1313 (TE85LF) is also used as a radio frequency amplifier. In this application, the device is used to amplify high frequency signals, such as those used in radio communication. The RN1313 (TE85LF) is designed to operate in a range of frequencies, allowing it to be used in a variety of applications. By controlling the external bias current and voltage, the device is able to amplify the signal without distorting it.

Overall, the RN1313 (TE85LF) is a popular choice for a wide range of applications. Its integrated circuitry enables pre-biased operation, which is beneficial for both amplifiers and switches. It is also able to efficiently amplify high frequency signals, making it suitable for radio communication applications. The RN1313 (TE85LF) is a reliable, cost-effective choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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