RN1606(TE85L,F) Allicdata Electronics
Allicdata Part #:

RN1606(TE85LF)TR-ND

Manufacturer Part#:

RN1606(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2NPN PREBIAS 0.3W SM6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: RN1606(TE85L,F) datasheetRN1606(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6
Description

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RN1606 (TE85L, F) is a pre-biased, bipolar transistor array. It is an integrated circuit (IC) composed of multiple transistors that are pre-biased and connected in a certain pattern. It is an easy-to-use solution for digital signal transmission and amplification in audio, RF, and other related applications.

The main feature of the RN1606 is the pre-biased transistors which reduce the need for biasing and adjusting circuits in the design. The array consists of two PNP transistors and one NPN transistor that are connected in series. This arrangement helps to reduce the number of necessary components and increases the operating efficiency of the circuit. Additionally, the RN1606 is designed for operation in low-frequency transceiver applications.

The main application field of the RN1606 is in wireless base stations and receivers. It has been developed to support the high-frequency, digital signal transmission requirements of the latest wireless protocols. The pre-biased transistors reduce power and current requirements, allowing the RN1606 to be used in battery-operated equipment.

RN1606 is also suitable for other applications that require a low-power signal amplifier, such as signal conditioning and audio processing. Its exceptional power efficiency also makes it a great choice for low-power radio transmitters.

The working principle of the RN1606 involves the pre-biased transistors that form the basis of the device. The two PNP transistors are connected in series and two NPN transistors are connected in parallel. This arrangement helps to reduce the number of components, lower power and current requirements, and increase the efficiency of the circuit. Additionally, the pre-biased arrangement permits low-frequency signal processing.

The NPN transistors work as amplifiers, as they generate current that is proportional to the incoming signal. This current is then passed to the PNP transistors, which then convert the signal into an output signal. The output signal is then amplified and passed to the output stage. This process forms the basis of the RN1606\'s signal amplifying capabilities.

In conclusion, the RN1606 is a pre-biased bipolar transistor array that is designed to reduce the number of components, power and current requirements. It is suitable for applications such as wireless base stations and receivers, signal conditioning and low-power radio transmitters. The pre-biased transistors in the RN1606 facilitate low-frequency signal processing and provide high-efficiency signal amplifying capabilities.

The specific data is subject to PDF, and the above content is for reference

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