Allicdata Part #: | TK16C60WS1VQ-ND |
Manufacturer Part#: |
TK16C60W,S1VQ |
Price: | $ 3.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 600V 15.8A I2PAK |
More Detail: | N-Channel 600V 15.8A (Ta) 130W (Tc) Through Hole I... |
DataSheet: | TK16C60W,S1VQ Datasheet/PDF |
Quantity: | 25 |
1 +: | $ 3.48390 |
Vgs(th) (Max) @ Id: | 3.7V @ 790µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 7.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15.8A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TK16C60W,S1VQ a popular FET (Field Effect Transistor) is used for many electronics applications and is ideal for high frequency switching circuits due to its low on-resistance. The FET is a type of electronic component comprised of multiple layers of conducting materials with gate, drain and source terminals that allows voltage and/or current control. This type of transistor operation is known as ‘field effect’ because it uses a thin barrier of material between the gate and source regions of the device which is called the channel. In the TK16C60W,S1VQ FET the channel length is 2.5µm and the gate width 0.4µm.
In its most basic form the TK16C60W,S1VQ FET serves as an electronic switch, allowing current to flow between the drain and source when the gate voltage exceeds the threshold voltage of the device. The drain and source regions are connected internally to the gate and together form the source-gate interface of the device. When a voltage is applied to the gate sufficient to create an inversion layer within the FET, a conducting channel between the drain and source is formed. The source and drain then act like a resistor and the current flowing between them is proportional to the voltage applied to the gate. Since the resistance is determined by the length of the channel, FETs provide a very efficient means of switching.
The TK16C60W,S1VQ is applicable in many kinds of fields. In the digital display area, it is used to drive the LCD panel. Since FETs are very similar to insulated gate bipolar transistors (IGBTs), they can often replace IGBTs in applications where a greater level of control is required. It can be applied in many other devices as well, such as solar array controllers, LED lighting controllers and smart home controllers. In power control electronic systems, the TK16C60W,S1VQ can be used to provide an adjustable bias for the switching circuit, allowing for more precise control of the circuit.
When it comes to applications, the TK16C60W,S1VQ is a very versatile FET, and is used in a variety of circuits. Its most common application is as a switch between two circuits, and as an electronic switch it allows current to pass between different circuits , when the gate voltage is greater than the threshold voltage. This type of FET is also commonly used in power control circuits, as the low on-resistance and high speed switching capabilities enable precise control of the circuit. Other potential applications include vector control, motor speed control and current sensing.
The TK16C60W,S1VQ is a versatile single FET which is suitable for a broad range of applications. Its low on-resistance, high speed switching and adjustable bias allowing for precise control of the circuit, has established its presence in some of the most significant and technologically advanced digital systems. The FET also represents one of the most efficient ways to switch and control currents and voltages, making it an essential tool in the development of modern electronics technology.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TK1689 | 3M (TC) | 184.14 $ | 1000 | PLANT SAFETY TAPE KITSafe... |
TK1621 | 3M (TC) | 0.0 $ | 1000 | BOATING TAPE KITMarine Ta... |
TK16V60W,LVQ | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N CH 600V 15.8A 5D... |
TK16A60W,S4VX | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N CH 600V 15.8A TO... |
TK16A60W5,S4VX | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N CH 600V 15.8A TO... |
TK16A45D(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 450V 16A TO-2... |
TK16A55D(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 550V 16A TO-2... |
TK16E60W5,S1VX | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 600V 15.8A TO... |
TK16G60W,RVQ | Toshiba Semi... | 2.44 $ | 1000 | MOSFET N CH 600V 15.8A D2... |
TK16E60W,S1VX | Toshiba Semi... | 3.44 $ | 58 | MOSFET N CH 600V 15.8A TO... |
TK16J60W,S1VQ | Toshiba Semi... | 3.79 $ | 31 | MOSFET N CH 600V 15.8A TO... |
TK16N60W,S1VF | Toshiba Semi... | 4.15 $ | 53 | MOSFET N CH 600V 15.8A TO... |
A-TB500-TK16SB | ASSMANN WSW ... | 1.63 $ | 1000 | TERMINAL BLOCK16 Position... |
TK1605800000G | Amphenol Any... | 1.25 $ | 1000 | 500 TB WIR PRO 180D SOL16... |
TK160F10N1L,LQ | Toshiba Semi... | 1.08 $ | 1000 | X35 PB-F POWER MOSFET TRA... |
TK16A60W,S4X | Toshiba Semi... | 1.82 $ | 1000 | MOSFET N CH 600V 15.8A D... |
TK16C60W,S1VQ | Toshiba Semi... | 3.87 $ | 25 | MOSFET N-CH 600V 15.8A I2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...