Allicdata Part #: | 2SK3128(Q)-ND |
Manufacturer Part#: |
2SK3128(Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 60A TO-3PN |
More Detail: | N-Channel 30V 60A (Ta) 150W (Tc) Through Hole TO-3... |
DataSheet: | 2SK3128(Q) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P(N) |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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2SK3128(Q) is a high-density power MOSFET that is designed to provide excellent performance and reliability making it ideal for a wide variety of applications. The devices are available in three different power levels: peak current, on-state resistance, maximum drain-source voltage. It is used in a variety of systems including power and battery management systems, industrial motor controls, automotive electronics and lighting control systems. The 2SK3128(Q) is an enhancement-type metal-oxide-semiconductor field-effect (MOSFET) transistor device.
A MOSFET is a type of field-effect transistor (FET) that relies on voltage to control the electrical current through a conducting channel in its structure. It is called an enhancement-type MOSFET because it requires an increase in voltage to create the conducting channel. The device is composed of two layers of metal oxide and several n-type (positive) and p-type (negative) semiconductors that form the electrical channel and the gate. The gate is insulated from the semiconductor channel, so that a voltage change at the gate creates an electric field in the channel. When the voltage at the gate is increased, more current can flow through the channel, allowing the device to be used as a switch or an amplifier.
2SK3128(Q) is a highly versatile device, with a wide range of operating parameters that makes it suitable for a variety of applications. Its peak current rating is up to 78A, with an on-state resistance of 3.2mΩ and a maximum drain-source voltage of 400V. It is capable of operating efficiently in frequencies ranging from 0.8kHz to 1MHz and is capable of supplying up to 97% of rated power during pulse operation. In addition, the device features a power dissipation of up to 10 W, low reverse-recovery times, low-leakage current and reverse polarity protection.
The 2SK3128(Q) is an excellent choice for a wide range of applications, including voltage converters, power supplies, motor drives, solar inverters and lighting. It is also suitable for automotive, industrial and consumer electronics as well as home appliance applications. The device can be used as an amplifier, switch, or voltage regulator, providing excellent performance and high efficiency. It can also provide protection against reverse polarity, overvoltage, undervoltage and overheating.
In conclusion, the 2SK3128(Q) is a high-performance MOSFET designed to provide reliable and efficient operation in a wide range of applications. With its peak current ratings, on-state resistance, and its features of low power dissipation, power efficiency, and reverse polarity protection, the 2SK3128(Q) is an ideal solution for many applications. Its wide range of operating parameters makes it suitable for low voltage and low power applications and its efficient design makes it an excellent choice for a broad range of applications.
The specific data is subject to PDF, and the above content is for reference
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