RN2967(TE85L,F) Discrete Semiconductor Products

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Bipolar transistors (BJT) are a type of active semiconductor that are used as the main building block of thousands of electronic devices. They are available in a wide variety of configurations, each having its own set of characteristics and applications. One such type is the T85L,F, also referred to as RN2967: a three-terminal integrated circuit with a pre-biased diode and field-effect transistor array for use in voltage-controlled current sources. In this article, we will discuss the features, applications, and working principles of the RN2967.

The RN2967 is a three-terminal device composed of a series connected two field-effect transistors (FETs) and two pre-biased junction diodes. This configuration allows for a wide input voltage range and wider temperature range than other BJT-based current sources. In addition, the RN2967 is rated for operation from a nominal supply voltage of 3.0V to 15V, with a quiescent current draw of only 6µA.

The primary application of the RN2967 is in voltage-controlled current sources. This type of device is used to control the amount of current delivered to a load based on an applied voltage. The current is typically drawn via the collector of the BJT, and the emitter is used to provide a feedback voltage. The gate of the FET, in turn, provides a control voltage that can be adjusted to change the amount of current being passed through the BJT.

In the RN2967, the diodes are pre-biased in order to provide an accurate and consistent current source from the beginning. This helps to reduce the variation in current over a wide input voltage range, resulting in more stable performance. Furthermore, the FETs in the RN2967 are tightly matched in order to ensure uniform characteristics and performance over the wide operating temperature range.

The RN2967 is designed to provide a current range of up to 2mA and has a voltage drop of approximately 1.2 across its input terminals. This makes it ideal for applications in which a high level of control is required, such as in battery charging, test and measurement equipment, and motor control systems.

The operation of the RN2967 is based on the principle of "controlling the amount of current" with an applied voltage. In the case of the RN2967, this is achieved by using the BJT collector, the FET gate, and the bias voltage provided by the diodes. When a voltage is applied to the input terminals of the device, the gate of the FET will be driven to a specific voltage, which in turn will adjust the amount of current flowing through the BJT.

The RN2967 is an attractive option for a variety of applications due to its wide operating temperature range, low quiescent current draw, and pre-biased diodes. Furthermore, its tight matching of the FETs ensures consistent characteristics and performance throughout the wide-input voltage range. As such, the RN2967 is an ideal choice for applications requiring a high level of accuracy and control over currents.

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