Storage logic trigger - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TTC5200(Q)-ND	TTC5200(Q)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 150W Frequency - Transition: 30MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(L)	1000 Order	--
SSM3K357RLFTR-N D	SSM3K357R,LF	Toshiba Semiconductor and Storage	View more Series: -MOSV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 650mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	3000 Order	3000+: $0.0777
TPN6R003NLLQTR- ND	TPN6R003NL,LQ	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Power Dissipation (Max): 700mW (Ta), 32W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.2469
2SC2235-O(T6FJT FM-ND	2SC2235-O(T6FJT ,FM	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC5930(TPF2FM) -ND	2SC5930(TPF2,F, M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA Current - Collector Cutoff (Max): 100A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V Power - Max: 1W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	1000 Order	1+: $0
TK39N60WS1VF-ND	TK39N60W,S1VF	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 38.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65 mOhm @ 19.4A, 10V Vgs(th) (Max) @ Id: 3.7V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 270W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	6 Order	1+: $7.5348 30+: $6.1786 120+: $5.5758 510+: $4.6716
CRY68(TE85LQM)T R-ND	CRY68(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 6.8V Tolerance: 10% Power - Max: 700mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 10A @ 3V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Base Part Number: CRY6V8	3000 Order	3000+: $0.1118 6000+: $0.1045 15000+: $0.0973 30000+: $0.0961
TPN6R303NCLQTR- ND	TPN6R303NC,LQ	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 15V Power Dissipation (Max): 700mW (Ta), 19W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.2554
TPN4R203NCL1QTR -ND	TPN4R203NC,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 23A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 15V Power Dissipation (Max): 700mW (Ta), 22W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.2881
1SS309(TE85LF)T R-ND	1SS309(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 4 Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV Base Part Number: 1SS309	9000 Order	3000+: $0.049 6000+: $0.0441 15000+: $0.0392 30000+: $0.0367 75000+: $0.0326
TLP2962(F)-ND	TLP2962(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: DC Output Type: Open Collector Current - Output / Channel: 50mA Data Rate: 15MBd Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Rise / Fall Time (Typ): 3ns, 12ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40C ~ 125C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	4 Order	1+: $0.8694 10+: $0.705 50+: $0.5423 100+: $0.4881 250+: $0.4338 500+: $0.3688 1000+: $0.3037 2500+: $0.2885 5000+: $0.282
2SC4116-YLFTR-N D	2SC4116-Y,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	1000 Order	3000+: $0.0202 6000+: $0.0183 15000+: $0.0159 30000+: $0.0143 75000+: $0.0127 150000+: $0.0106
TLP293-4(V4LATR ETR-ND	TLP293-4(V4LATR E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500A Current Transfer Ratio (Max): 600% @ 500A Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	1000 Order	2000+: $0.2876 6000+: $0.2811 10000+: $0.2703
TC78H621FNGELTR -ND	TC78H621FNG,EL	Toshiba Semiconductor and Storage	View more Series: * Packaging: Tape & Reel (TR) Part Status: Active	1000 Order	4000+: $0.4234 8000+: $0.4022 12000+: $0.3871
TB67S158FTGELTR -ND	TB67S158FTG,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Motor Type - Stepper: Unipolar Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (8) Interface: Parallel Technology: DMOS Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 60 V Operating Temperature: -20C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Supplier Device Package: 48-WQFN (7x7)	1000 Order	4000+: $1.0893
TC7MBL3245CFT(E L)TR-ND	TC7MBL3245CFT(E L)	Toshiba Semiconductor and Storage	View more Series: TC7MB Packaging: Tape & Reel (TR) Part Status: Active Type: Bus Switch Circuit: 8 x 1:1 Independent Circuits: 1 Voltage Supply Source: Single Supply Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	8000 Order	--
TMPM037FWUG(KYJ Z)-ND	TMPM037FWUG(KY, JZ)	Toshiba Semiconductor and Storage	View more Series: TX00 Packaging: Tray Part Status: Active Core Processor: ARM Cortex-M0 Core Size: 32-Bit Speed: 20MHz Connectivity: IC, SIO, UART/USART Peripherals: DMA, LVD, POR, WDT Number of I/O: 51 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V Data Converters: A/D 8x10b Oscillator Type: External Operating Temperature: -40C ~ 85C (TA) Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	790 Order	1+: $2.2932 10+: $2.0475 25+: $1.8429 160+: $1.679 320+: $1.5152 640+: $1.3595 1120+: $1.1466 2560+: $1.0893 5120+: $1.0483
TK7A65D(STA4QM) -ND	TK7A65D(STA4,Q, M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 980 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $1.295
DF3D6.8MSLFTR-N D	DF3D6.8MS,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Steering (Rail to Rail) Unidirectional Channels: 2 Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 11V (Typ) Current - Peak Pulse (10/1000s): 1A (8/20s) Power Line Protection: Yes Applications: General Purpose Capacitance @ Frequency: 0.5pF @ 1MHz Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	3000+: $0.0304 6000+: $0.0265 15000+: $0.0225 30000+: $0.0212 75000+: $0.0198 150000+: $0.0176
TL1L3-LW1LTR-ND	TL1L3-LW1,L	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Warm CCT (K): 3000K Flux @ 25C, Current - Test: 119 lm (Typ) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.85V Lumens/Watt @ Current - Test: 119 lm/W CRI (Color Rendering Index): 80 Current - Max: 1A Viewing Angle: 100 Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.099" (2.52mm) Thermal Resistance of Package: 5C/W	1000 Order	1+: $0
TLP220J(F)-ND	TLP220J(F)	Toshiba Semiconductor and Storage	View more Series: TLP220J Packaging: Tube Part Status: Not For New Designs Mounting Type: Through Hole Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.63VDC Voltage - Load: 0V ~ 600V Load Current: 90mA On-State Resistance (Max): 60 Ohms Termination Style: PC Pin Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: 4-DIP	1000 Order	--
TLP4026GF-ND	TLP4026G(F)	Toshiba Semiconductor and Storage	View more Series: TLP4026G Packaging: Tube Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO + SPST-NC (1 Form A and B) Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 350V Load Current: 120mA On-State Resistance (Max): 25 Ohms Termination Style: Gull Wing Package / Case: 8-SOP (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (2.54mm)	1668 Order	1+: $1.8018 10+: $1.6871 25+: $1.4994 50+: $1.4244 100+: $1.3495 250+: $1.1995 500+: $1.1246 1000+: $1.0496 5000+: $1.0121
DF2S6.8UCTL3FTR -ND	DF2S6.8UCT,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 19V (Max) Voltage - Breakdown (Min): 22V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 1.6pF @ 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2	1000 Order	10000+: $0.0318
CLS02(T6LCANO-O Q-ND	CLS02(T6L,CANO- O,Q	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 420pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT Supplier Device Package: L-FLAT (4x5.5) Operating Temperature - Junction: -40C ~ 125C	1000 Order	1+: $0
CLS02(T6LCLARQ) -ND	CLS02(T6L,CLAR, Q)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 420pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT Supplier Device Package: L-FLAT (4x5.5) Operating Temperature - Junction: -40C ~ 125C	1000 Order	1+: $0
TLP632F-ND	TLP632(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 100C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP	9 Order	1+: $0.9828
TLP387(TPLETR-N D	TLP387(TPL,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 1000% @ 1mA Turn On / Turn Off Time (Typ): 50s, 15s Rise / Fall Time (Typ): 40s, 15s Input Type: DC Output Type: Darlington Voltage - Output (Max): 300V Current - Output / Channel: 150mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 1V Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Supplier Device Package: 6-SO	6000 Order	3000+: $0.1834 6000+: $0.1768 15000+: $0.1742 30000+: $0.1703
TC62D723FNGCELT R-ND	TC62D723FNG,C,E L	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Type: Linear Topology: Shift Register Internal Switch(s): Yes Number of Outputs: 16 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 17V Current - Output / Channel: 90mA Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad Supplier Device Package: 24-HTSSOP	1000 Order	2000+: $1.0516 6000+: $1.012
RN1132MFVL3F-ND	RN1132MFV,L3F	Toshiba Semiconductor and Storage	View more Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 200 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	8000+: $0.0183
RN2711(TE85LF)T R-ND	RN2711(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	1000 Order	1+: $0
RN2503(TE85LF)T R-ND	RN2503(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	1000 Order	1+: $0
RN1107CT(TPL3)T R-ND	RN1107CT(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	1+: $0
SSM3K62TULFTR-N D	SSM3K62TU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 57 mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	3000 Order	3000+: $0.0801
2SA1020-Y(T6OMI FM-ND	2SA1020-Y(T6OMI ,FM	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SD2206T6F(J-ND	2SD2206,T6F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
TPCF8102(TE85L, F,M-ND	TPCF8102(TE85L, F,M	Toshiba Semiconductor and Storage	View more Series: U-MOSIII Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-8 (2.9x1.5) Package / Case: 8-SMD, Flat Lead	1000 Order	1+: $0
SSM3K303T(TE85L F)TR-ND	SSM3K303T(TE85L ,F)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 83 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
TCR15AG33LFTR-N D	TCR15AG33,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 3.3V Voltage Dropout (Max): 0.648V @ 1.5A Current - Output: 1.5A Current - Quiescent (Iq): 40A PSRR: 95dB ~ 60dB (1kHz) Control Features: Enable Protection Features: Current Limit, Thermal Shutdown, UVLO Operating Temperature: -40C ~ 85C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Supplier Device Package: 6-WCSP (1.2x0.80)	1000 Order	5000+: $0.1403 10000+: $0.1351 25000+: $0.1299
TC7LX1102FKLFCT -ND	TC7LX1102FK,LF	Toshiba Semiconductor and Storage	View more Series: TC7LX Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Translator Type: Voltage Level Channel Type: Bidirectional Number of Circuits: 1 Channels per Circuit: 2 Voltage - VCCA: 1.2V ~ 3.6V Voltage - VCCB: 1.2V ~ 3.6V Data Rate: 200Mbps Operating Temperature: -40C ~ 85C (TA) Features: Auto-Direction Sensing Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Supplier Device Package: US8	1000 Order	1+: $0
TC7WB67CL8XLFTR -ND	TC7WB67CL8X,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Number of Channels: 2 On-State Resistance (Max): 10 Ohm Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Package / Case: 8-UFLGA Supplier Device Package: MP8	1000 Order	3000+: $0.1074

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