Allicdata Part #: | 2SC4116-YLFTR-ND |
Manufacturer Part#: |
2SC4116-Y,LF |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 50V 0.15A USM |
More Detail: | Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 100mW... |
DataSheet: | 2SC4116-Y,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02024 |
6000 +: | $ 0.01826 |
15000 +: | $ 0.01588 |
30000 +: | $ 0.01429 |
75000 +: | $ 0.01270 |
150000 +: | $ 0.01058 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 6V |
Power - Max: | 100mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
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The 2SC4116-Y,LF is a single bipolar transistor released by Fujitsu. It has a low current consumption and excellent hFE linearity and has applications across a wide range of industries, from automotive to consumer electronics. This article will explore the application field and working principle of the 2SC4116-Y,LF.
The 2SC4116-Y,LF is a low noise, low voltage, high collector current transistor. Its maximum power dissipation is 350mW, it can operate at Collector-Emitter Voltage of -30V with a maximum Collector-Emitter Saturation Voltage of -0.2V. It is designed for general purpose applications, and is especially suitable for use in amplifier and switching circuits where low noise and high speed are required.
The 2SC4116-Y,LF can be used in the following applications:
- High gain amplifying circuits
- Switch and driver circuits
- Audio amplifying circuits
- Automotive electronics
- Consumer electronics
The 2SC4116-Y,LF is a three-terminal NPN bipolar transistor. It is composed of a base, a collector and an emitter. The base terminal is the input to the device - it controls the flow of current between the other two terminals, the collector and emitter. When the current is allowed to flow, current is also allowed to pass through the collector to the emitter, thus allowing the transistor to act as an amplifying or switching element.
The amount of current that can be allowed to flow between the collector and emitter is controlled by the amount of current that is introduced to the base. This principle is known as the transistor\'s common-base current gain (hFE). The higher the hFE, the more current can be allowed to flow. The hFE of the 2SC4116-Y,LF is typically in the range of 400 to 600.
In order for current to flow through the 2SC4116-Y,LF transistor, the base must have a voltage higher than the voltage of the emitter. This is known as the transistor\'s "VBE", or base-emitter threshold voltage. The VBE of the 2SC4116-Y,LF is typically in the range of 0.6 to 0.8V.
The 2SC4116-Y,LF can also be used as a switch in a high-speed circuit, as its switching speed is very fast. Its switching speed is typically in the range of 0.1 to 5nS. This makes it an ideal choice for use in high-speed circuits, where fast switching speed is required.
The 2SC4116-Y,LF is an excellent choice for a variety of applications, from high gain amplifiers to automotive and consumer electronics. Its low current consumption and excellent hFE linearity make it a versatile and reliable transistor that can be used in a variety of applications. Its fast switching speed also makes it an ideal choice for high-speed circuits. With its wide variety of uses and excellent performance characteristics, the 2SC4116-Y,LF is an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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