| Allicdata Part #: | TK39N60WS1VF-ND |
| Manufacturer Part#: |
TK39N60W,S1VF |
| Price: | $ 8.29 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N CH 600V 38.8A TO247 |
| More Detail: | N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole T... |
| DataSheet: |  TK39N60W,S1VF Datasheet/PDF |
| Quantity: | 6 |
| 1 +: | $ 7.53480 |
| 30 +: | $ 6.17862 |
| 120 +: | $ 5.57577 |
| 510 +: | $ 4.67158 |
| Vgs(th) (Max) @ Id: | 3.7V @ 1.9mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 270W (Tc) |
| FET Feature: | Super Junction |
| Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 300V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | DTMOSIV |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 19.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 38.8A (Ta) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The TK39N60W,S1VF is a power MOSFET with a high-speed drain-source switching capability. It is ideal for applications that require an efficient and economical way to control large currents, such as motor control, power conditioning, and power amplifiers. This article will discuss the application field and working principle of this part.
Application Field
The TK39N60W,S1VF is designed to be used in many power conversion, motor control, and power amplifier applications. It is suitable for use in high current applications such as switching mode power supplies and motor drives. It has a breakdown voltage of 600V and a maximum drain current of 70A. This part is also suitable for use in high frequency switching applications such as switching power converters, DC-DC converters, and high power RF applications. It can also be used in SMPS applications where the device is used as a switching transistor to control on and off timing.
Working Principle
The TK39N60W,S1VF is a power MOSFET device that uses a p-channel structure to provide a fast switching action with a low on-resistance characteristic. It has a built-in fast body diode that can handle up to 70 amperes of current. The device uses an insulated gate structure to control the flow of current through the channel. When the gate voltage is increased, a depletion region is formed between the gate and the source, which reduces the channel resistance, allowing the device to conduct current. When the gate voltage is decreased, the device returns to its off-state as the depletion region collapses.
The TK39N60W,S1VF is a very versatile device and can be used in a variety of applications. It has a high switching frequency and a wide operating temperature range, making it suitable for a variety of applications. It is a cost-effective solution for power control and energy conversion applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| TK39J60W,S1VQ | Toshiba Semi... | 7.77 $ | 41 | MOSFET N-CH 600V 38.8A TO... |
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