Allicdata Part #: | 2SC2235-O(T6FJTFM-ND |
Manufacturer Part#: |
2SC2235-O(T6FJT,FM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 800MA 120V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900... |
DataSheet: | 2SC2235-O(T6FJT,FM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 100mA, 5V |
Power - Max: | 900mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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The 2SC2235-O(T6FJT,FM) is a single bipolar transistor, commercially available in an axial-lead form factor. It is typically used in power switching and amplifier applications. The 2SC2235-O has a maximum collector-emitter voltage of 500V, a maximum collector current of 1.5A, and a power dissipation of 2W. The 2SC2235-O also has an excellent hFE (DC Current Gain) performance, ranging from 10 to 1000 (typical).
The basic operating principle of the 2SC2235-O is based on the charge transport between two doped semiconductor layers. In a bipolar transistor, these layers, called the base and the two collector-emitter contacts, are divided into two parts by the highly conductive base layer. When a voltage is applied across the base-emitter junction, the electric field created at this junction allows charge carriers, such as electrons and holes, to flow freely into the base layer and then be swept across the region between the two collector-emitter contacts. This charge transfer occurs with a corresponding change in voltage across the collector-emitter junction, thus providing current gain.
The 2SC2235-O is used in amplifier and power switching applications because of the advantages it offers over more commonly used types. Its higher voltage and current ratings allow it to switch larger loads and provide higher current gain, making it useful in power switching applications such as DC-DC converters and inverters. Because of its excellent hFE performance, the 2SC2235-O is a good choice for amplifier applications, particularly for audio and RF amplifiers. Additionally, its axial-lead form factor allows for easy circuit board mounting.
In conclusion, the 2SC2235-O is a single bipolar transistor used in power switching and amplifier applications. Its higher voltage and current ratings allow it to switch larger loads and provide higher current gain, making it useful in power switching applications. Additionally, its excellent hFE performance makes it well suited for amplifier applications, and its axial-lead form factor allows for easy circuit board mounting.
The specific data is subject to PDF, and the above content is for reference
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