CY621282BNLL-70SXET Allicdata Electronics
Allicdata Part #:

CY621282BNLL-70SXET-ND

Manufacturer Part#:

CY621282BNLL-70SXET

Price: $ 3.49
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 1M PARALLEL 32SOIC
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: CY621282BNLL-70SXET datasheetCY621282BNLL-70SXET Datasheet/PDF
Quantity: 1000
1000 +: $ 3.17024
Stock 1000Can Ship Immediately
$ 3.49
Specifications
Series: MoBL®
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Supplier Device Package: 32-SOIC
Base Part Number: CY621282
Description

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The CY62128BNLL-70SXET is a high-performance memory device that is designed to meet the needs of a wide variety of applications. It is a cost-effective, 16-Bit SDRAM Memory Device that offers an excellent choice for a wide range of applications. The CY62128BNLL-70SXET is designed to allow its users the ability to upgrade their memory capacity and performance while achieving the most performance per watt with its low power consumption.

The CY62128BNLL-70SXET is a synchronous device and is optimized for high-speed operations. It uses advance timing circuitry that enables the device to become fully operational within one clock cycle, reducing latency and providing faster access times for its users. It offers users the ability to access data faster and further improve system performance. It also features a low standby power consumption and power down modes for power savings.

The CY62128BNLL-70SXET features two types of organization, the Single Data Rate (SDR) and the Double Data Rate (DDR) versions. The SDR version supports burst read and write operations while the DDR version supports burst read or write operations. The CY62128BNLL-70SXET also has a built-in error correcting code (ECC) that helps reduce data retrieval errors. In addition, it also has a write protection feature that prevents any unauthorized memory changes.

Most commonly, the CY62128BNLL-70SXET is used for applications like gaming consoles and handsets as well as embedded systems. It is also used widely in medical, automotive, industrial and military applications. All of these applications demand both high-speed operations with low power consumption and the CY62128BNLL-70SXET is perfectly suited to meet their needs. The CY62128BNLL-70SXET has the ability to store a large amount of data and is highly reliable.

The CY62128BNLL-70SXET is constructed using a dielectric isolation technology that provides power savings, higher speed operation and better thermal cycling. Additionally, it also has on-chip circuitry that reduces the need of external components. This greatly reduces its circuit size and enhances the performance of the device. The CY62128BNLL-70SXET also features two clock pins, two data pins, two address pins and two control pins, reducing the complexity of the wiring.

In conclusion, the CY62128BNLL-70SXET is a high-performance, low-power memory device that is perfect for applications that demand high-speed, low power operations. It comes in both SDR and DDR versions and features on-chip error correcting code, write protection and dielectric isolation, to ensure top performance and reliability. The CY62128BNLL-70SXET is used for gaming consoles and handsets as well as embedded systems, medical, automotive, industrial and military applications, making it an excellent choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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