CY62158EV30LL-45ZSXIT Allicdata Electronics
Allicdata Part #:

428-3959-2-ND

Manufacturer Part#:

CY62158EV30LL-45ZSXIT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 8M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 8Mb (1M x 8) Paralle...
DataSheet: CY62158EV30LL-45ZSXIT datasheetCY62158EV30LL-45ZSXIT Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: MoBL®
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: CY62158
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CY62158EV30LL-45ZSXIT belongs to the category of memory. The abbreviation of memory stands for ‘random access memory’, a type of semiconductor device used in computers and other digital systems to store and retrieve data. This type of memory has different application fields, depending on its features and capabilities, and the working principle behind it is also an important factor in understanding how it works.

Firstly, the application field of CY62158EV30LL-45ZSXIT is mainly in embedded systems. It is beneficial for such systems due to its low power consumption and fast read/write speeds, as well as its wide operating voltage range, which allows it to work in all kinds of environments. This kind of memory is also an ideal choice for applications that require reliable data storage capacity, such as automotive systems, medical solutions, and other safety-critical systems. Additionally, it is suitable for applications that require high endurance, as it provides excellent data retention characteristics and can withstand high temperatures.

When it comes to working principle, CY62158EV30LL-45ZSXIT is based on a concept called ‘static random access memory’ (SRAM). SRAM is a type of memory that is ideal for high-speed access and can handle fast read/write operations. It is composed of transistors embedded in a silicon substrate, arranged in a specific pattern, and connected in such a way that each memory cell stores a single bit of data. This data is retained even after power is removed, as these cells are static, meaning they do not need to be constantly refreshed like dynamic RAM cells. This configuration allows SRAM to carry out its read/write operations more quickly than DRAM, the other type of memory, and also allow it to retain data even when there is no power.

As a result, CY62158EV30LL-45ZSXIT is an excellent choice for memory applications that require fast read/write speeds, low power consumption and data retention even in the absence of power. Furthermore, it is also a great choice for applications that require high reliability, as it is capable of withstanding even extreme conditions. Therefore, this type of memory is ideal for applications in embedded systems, automotive solutions and safety-critical systems.

The specific data is subject to PDF, and the above content is for reference

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