CY62148G30-45ZSXI

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CY62148G30-45ZSXI is a 8M bit, low-voltage, asynchronous, static random-access memory (SRAM). It belongs to the category of memory and is used for data storage and and internal memory for electronic systems.

This device is typically used in applications such as high-speed networking, medical instrumentation, avionics, set-top boxes, computer motherboards and other consumer electronics. It is a 5-volt device and its core power consumption is below 500 µA. This device also incorporates a self-refresh mode for power saving operation.

The CY62148G30-45ZSXI is a synchronized DRAM (SDRAM) which is an advanced form of DRAM that uses a clock to facilitate in operations like read, write and refresh. The device is capable of synchronizing with an external clock of either 1,2.5,3.3 or 5 V. This device contains 8M bit memory, organized as 1,048,576 words of 8 bit configuration.

The CY62148G30-45ZSXI has an asynchronous read latency (tRC) of 8 clock cycles plus the access time (tACC) of 10 ns. This device also supports write operations with a write latency (tWC) of 13 clock cycles plus the write enable time (tWE) of 10 ns. This device has separate enable and write enable pins for ease of use.

The CY62148G30-45ZSXI also provides a low-voltage detection circuit for detecting low-voltage conditions. This device is capable of automatically lowering its VCC to a safe operating level. Additionally, it incorporates an on-die temperature sensing circuit that is capable of detecting high-temperature conditions. This allows the device to adjust its core power consumption to reduce power dissipation.

The CY62148G30-45ZSXI employs a two-stage pipeline architecture to minimize the memory access latency. The first stage is responsible for issuing the command to the internal circuits and the second stage is responsible for executing the command. This device also supports four addressing modes – linear (random access), burst, repeat and serial.

The device incorporates several signal pins to control the operation of the device. The RW pin is used to control the read and write operations on the device while the RA pin controls the address bus. The ECS pin is used to activate the chip select and the OE pin is used to control the data outputs. Additionally, the SEN/CSEN pin is used to enable or disable the chip select.

The CY62148G30-45ZSXI also implements a precharge mode. The mode is used to reduce power when the device is idle. When the precharge mode is activated, the device reduces the internal operating voltage and reduces the current consumption. This feature can be enabled or disabled through the PWR pin of the device. Finally, the device is capable of self-refresh mode operation, where the device maintains the content of memory cells during the idle state.

In conclusion, the CY62148G30-45ZSXI is a versatile asynchronous SRAM with a wide range of features, such as low-voltage operation, synchronization capability, precharge mode for power savings and temperature sensing for automatic adjustment of core power. This device is suitable for applications such as high-speed networking, medical instrumentation, avionics, set-top boxes, computer motherboards and other consumer electronics.

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