CY62148EV30LL-55ZSXE

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The CY62148EV30LL-55ZSXE memory device is an 8-bit, low-power CMOS static RAM. It utilizes single 2.7V- to 3.6V-power supplies and is designed to provide a fast access time and low power consumption in a small package size. This memory device is ideal for applications that require low-power operation or need the extra speed that an 8-bit SRAM provides compared to other memories.

The CY62148EV30LL-55ZSXE memory device is mainly used for applications in the industrial, automotive, telecommunications, and consumer electronics markets. It is a great choice for applications such as point-of-sale systems, handheld products, automotive systems, data-logging and -recording, instrumentation devices, and digital audio systems. It is also used for wired and wireless communication applications, particularly in routers, digital subscriber line (DSL) systems, wireless networking, cell phones and wireless data converters.

The CY62148EV30LL-55ZSXE memory device is a single 2.7V–3.6V power supply device. This type of device is easier to implement and is more power efficient compared to dual voltage packaged memory devices. The memory device is designed to operate in temperatures between -40°C and +105°C, making it suitable for a wide range of applications. The memory device is designed to run in both synchronous and asynchronous modes. In synchronous operation, the device runs at a maximum clock frequency of 55MHz. In asynchronous operation, the device runs at speeds up to 25MHz. The device not only offers a fast access time of 55ns, but also has very low power consumption. It only draws 1.88mA of current in active mode and 30µA in standby mode.

The CY62148EV30LL-55ZSXE memory device operates using a Static RAM (SRAM) cell array. SRAM devices are known for their low standby current and fast access time. The CY62148EV30LL-55ZSXE memory device is architected with a 6T (six-transistor) SRAM that is organized as a 256K x 8-bit device, with each memory cell made up of six transistors. Each memory cell can store one bit of data and there are 256K memory cells in the device, allowing it to store up to 256KB of data. The device also includes an integrated error detection and correction (EDAC) circuit to detect and correct double-bit errors in the memory array.

The 6T architecture of the CY62148EV30LL-55ZSXE memory device is designed to enable fast access times and low power consumption. Each memory cell consists of two pass transistors (PT1 for accessing the bit line and PT2 for connecting the bit line to the cell), two storage transistors (ST1 and ST2 for storing the bit data), and two select transistors (S1 and S2 for selecting the row and column of the memory cell). To read out a memory cell, the row and column addresses are applied to the device, the corresponding memory cell is selected, and its content is read out on the bit line. To write a memory cell, the data is written to the bit line, the row and column address are applied to the device, and the data is latched into the cell. The memory device uses multiplexers for convenient row and column address decoding.

The CY62148EV30LL-55ZSXE memory device has a wide operating temperature range, low-power consumption, and a fast access time, making it the perfect memory device for the industrial, automotive, consumer electronics, and telecommunications markets. It is ideal for applications such as point-of-sale systems, handheld products, automotive systems, data-logging and -recording, instrumentation devices, digital audio systems, wired and wireless communication applications, and more. This device’s 6T SRAM cell array and built-in EDAC circuit make it an optimal choice for memory applications that require fast access times and low power consumption.

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