CY62147GE18-55BVXI

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The CY62147GE18-55BVXI is an 8-Mbit asynchronous static random access memory (SRAM). It is a high performance, low-power SRAM designed for low voltage and low power applications. With its wide operating voltage range of 1.8V to 3.6V and its low standby current of 1.1mA, it is ideal for applications where both low power consumption and performance are paramount.

The CY62147GE18-55BVXI is suitable for use in embedded systems, automotive, consumer, and communications markets such as network routing, storage controllers, and industrial automation. It features Ultra-Low Power (ULP) Technology for extremely-low power consumption and is available in a variety of Package and Density combinations.

The CY62147GE18-55BVXI operates by transferring data between the internal memory banks and an external microprocessor or device controller. The data is organized into a number of varying word lengths, with the width of words ranging from 4 to 32 bits, depending on the system architecture. Data is stored in each memory bank, one bit per memory cell, and is retrieved when requested by the microprocessor or controller. To enable this, each memory bank has its own associated address.

The internal construction of the CY62147GE18-55BVXI is composed of a number of components, including transistors, resistors, and capacitors. These components are organized into a number of blocks which are connected via internally generated control signals. The basic blocks of the IC include the memory cell array, address buffer, write logic, data latch, and output buffers.

The memory cell array is composed of thousands of individual memory cells using CMOS technology. Each cell is composed of a pair of access transistors, an inverter, and a storage node. The access transistors allow data to be written to or read from the storage node. When data is written, the access transistors act as switches to allow the data to be sent to the storage node. When data is read, the access transistors act as a barrier to prevent data from floating from the storage node.

The address buffer holds the address for each location in the memory array. It is used to determine which memory cell should be read or written. The address buffer is connected to the write logic block which contains a group of logic gates that decide when data needs to be written or read from the memory cell array. It also controls the data that is sent to the data latch block.

The data latch block holds the data that is sent to the memory cells while they are writing. The output buffers are connected to the memory cells and allow the data to be read by the microprocessor or controller. They also act as a buffer to protect the memory cells from noise and other electrical interference.

The CY62147GE18-55BVXI is an ideal choice for low-power applications where both performance and power efficiency are critical. With its wide operating voltage range and low standby current, it is ideal for embedded systems, automotive, consumer, and communications markets such as network routing, storage controllers, and industrial automation.

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