CY62147EV30LL-45B2XI

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The CY62147EV30LL-45B2XI memory is a hybrid memory IC with a density of 8Mbits or 1MBytes and a multiplexed address/data (x32) architecture. This device is typically used for applications that require non-volatile random access memory for high speed register-based and streaming data processing, such as multimedia applications, image and sound processing applications, wireless cellular phones, digital still cameras, embedded systems and system-on-a-chip (SoC) applications.

Application Field

The CY62147EV30LL-45B2XI memory is ideal for low power applications as it features fast write speeds and low-power operation. It\'s primary application is in the area of non-volatile lock-step register-based and streaming data processing. This device is used in a wide range of consumer, portable, embedded and IoT applications, such as multimedia, image and sound processing, wireless cellular phones, digital still cameras, embedded systems and system-on-a-chip (SoC) applications.

The CY62147EV30LL-45B2XI device is power managed with an internal power regulator, and its multiplexed address/data (x32) architecture is optimized for high speed operation with fast write speeds. The device is also self-timed to reduce power consumption and device cost.

Working principle

The working principle for the CY62147EV30LL-45B2XI is based on the hybrid memory architecture, which combines volatile and nonvolatile components. The core component of the device is a 128K x32 cell array, which is built with an advanced floating gate MOS capacitor cell structure. Each cell can store one bit of information. The device has an internal register that stores the data of the cell. The floating gate cell structure allows the device to retain the data even when power is not applied.

The device features a single I/O hookup that is used to input and output instructions and data. The device also features an internal bootstrapping circuit that can be used to program the parameters of the device. With the I/O hookup, the device can be programmed to access and write data to the cell array. The device also features an internal multiplexer and shift register that is used to select the cell address. It is programmed using addresses that are multiplexed to maintain high-speed operation.

The device is powered with a single +3V voltage supply and requires a minimum standby current. Its core component, the 128K x32 cell array, uses three capacitors that control the cell\'s threshold voltage, allowing the device to maintain data retention for up to 10 years. The device also features data polling for reliable data integrity.

The device has error detection features that allow it to detect when a cell has gone into an unstable state and will prevent data corruption. It also has error correction features to correct errors when they occur. The device can also perform read and write operations at very high speed.

In summary, the CY62147EV30LL-45B2XI is a hybrid memory IC with 8Mbits or 1MBytes of density and a multiplexed addressing/data (x32) architecture. It is used for applications that require non-volatile random access memory for high speed register-based and streaming data processing, such as multimedia applications, image and sound processing applications, embedded systems and system-on-a-chip (SoC) applications. The device has an advanced floating gate MOS capacitor cell structure, an internal bootstrapping circuit, and an internal multiplexer and shift register, as well as error detection and correction features. It is powered with a single +3V voltage supply and requires a minimum standby current. It is optimized for high speed operation with fast write speeds, and can retain data for up to 10 years.

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