CY62147GE18-55ZSXI Allicdata Electronics
Allicdata Part #:

CY62147GE18-55ZSXI-ND

Manufacturer Part#:

CY62147GE18-55ZSXI

Price: $ 4.80
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: CY62147GE18-55ZSXI datasheetCY62147GE18-55ZSXI Datasheet/PDF
Quantity: 105
1 +: $ 4.35960
10 +: $ 4.01247
25 +: $ 3.92893
50 +: $ 3.91507
135 +: $ 3.51222
270 +: $ 3.40574
540 +: $ 3.23904
1080 +: $ 3.12559
Stock 105Can Ship Immediately
$ 4.8
Specifications
Series: MoBL®
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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Today, memories are an integral part of any modern technology. They allow for faster operations, provide more robust data storage, and provide higher levels of efficiency than ever before. The CY62147GE18-55ZSXI is a memory component that has become particularly popular in recent years due to its ability to cover a wide range of different applications. This article will explore the CY62147GE18-55ZSXI application field, as well as its working principle.

Application Field

The CY62147GE18-55ZSXI is an EDO (extended data output) DRAMchip. It has a relatively fast access time of 18ns, and is capable of up to 32 MB of data storage. Its architecture is 70nm, and its configuration can be altered using dynamic CAS latency (CASL) senses. This flexibility makes it suitable for a wide array of different applications.

The most typical uses for the CY62147GE18-55ZSXI are in systems that need high-density, high-speed memory. This could include applications such as telecommunications systems, medical imaging systems, high-speed gaming systems, and applications that use large amounts of data processing. This chip has also been proven to be an effective memory component for computers that are energy-efficient, as it is relatively power-efficient compared to other components.

Working Principle

The CY62147GE18-55ZSXI consists of three major layers. The first is the DRAM (dynamic random-access memory) layer, which is responsible for memory operations. This is followed by the control logic layer, which handles control signals between the DRAM layer and the system bus. Finally, there is the I/O layer, which is responsible for sending and receiving data.

The basic operation of the CY62147GE18-55ZSXI is as follows. Information is first stored in the DRAM layer. This data is then passed through the control logic layer, which determines the address and how it is sent to the system bus. Finally, the I/O layer passes the data through an input/output circuit, which transfers the data to the outside world. This process is completed within 18ns, making it ideal for high-speed applications.

Conclusion

The CY62147GE18-55ZSXI is an EDO DRAMchip suitable for a wide array of applications. It features a fast access time of 18ns and can handle up to 32 MB of data storage. It has three layers, the DRAM layer, control logic layer, and the I/O layer, which together make it a capable memory component.

The specific data is subject to PDF, and the above content is for reference

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