Allicdata Part #: | CY62137FV30LL-45ZSXAT-ND |
Manufacturer Part#: |
CY62137FV30LL-45ZSXAT |
Price: | $ 3.49 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 2M PARALLEL 44TSOP II |
More Detail: | SRAM - Asynchronous Memory IC 2Mb (128K x 16) Para... |
DataSheet: | CY62137FV30LL-45ZSXAT Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 3.17441 |
Series: | MoBL® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 2Mb (128K x 16) |
Write Cycle Time - Word, Page: | 45ns |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.2 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
Base Part Number: | CY62137 |
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The CY62137FV30LL-45ZSXAT is a low-power, high-speed Static Random Access Memory (SRAM). One of the major advantages of SRAM is that it is extremely fast, with access time as low asIn addition to its speed, SRAM has other advantages over other types of memory devices. Its low power consumption makes it an ideal choice for battery-operated applications. As its name suggests, SRAM is also characterized by its static nature, meaning that it will not lose information regardless of power supply interruptions.
As with all memory technologies, the CY62137FV30LL-45ZSXAT has potential application fields. It is widely used in embedded systems, including industrial, automotive and home automation control systems. Additionally, it has been used in audio and video processing, medical equipment and aerospace exploration. Given its low power consumption and fast access times, it is also suitable for handheld and portable devices.
In terms of its working principle, the CY62137FV30LL-45ZSXAT is comprised of Static Random Access Memory Cells (SRAM Cells). Each SRAM Cell contains six transistors, two access transistors, four pass transistors and two cross-coupled inverters. The SRAM Cells are organized in rows and columns. The access transistors are responsible for controlling the flow of data into and out of the SRAM Cell, while the pass transistors are responsible for biasing the SRAM Cell. The cross-coupled inverters control the state of the SRAM Cell, switching between 0 and 1 states.
The CY62137FV30LL-45ZSXAT is a low cost and highly reliable memory technology. Its low power consumption and fast access times make it an ideal choice for applications requiring both power efficiency and speed. Furthermore, its static nature ensures that information will not be lost due to power interruptions. Its potential applications span across a wide range of industries, including medical equipment, automotive, aerospace exploration and embedded systems. Its working principle relies on Static Random Access Memory Cells, which are organized in a matrix of rows and columns, and are comprised of access and pass transistors, as well as two inverters.
The specific data is subject to PDF, and the above content is for reference
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