Allicdata Part #: | APTGF90DH60TG-ND |
Manufacturer Part#: |
APTGF90DH60TG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT MODULE NPT ASYM BRIDGE SP4 |
More Detail: | IGBT Module NPT Asymmetrical Bridge 600V 110A 416W... |
DataSheet: | APTGF90DH60TG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Discontinued at Digi-Key |
IGBT Type: | NPT |
Configuration: | Asymmetrical Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 110A |
Power - Max: | 416W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 90A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 4.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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APTGF90DH60TG is an insulated gate bipolar transistor (IGBT) module, which belongs to the class of transistors. It is widely used in various fields, and its working principle is based on the controlling of the output of a bipolar junction transistor.
An IGBT is a type of semiconductor power device with four leads: collector, emitter, and two gates. It combines the advantages of a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) in one package. It is fast switching and can block or conduct current with low on-state voltage drop. The main difference between an IGBT and a MOSFET is the use of a virtual gate, which controls the conduction of the current. This virtual gate is the connection between the two sets of junctions and the voltage applied to it is used to control the output of the transistor.
The APTGF90DH60TG is a modular IGBT with a maximum collector-emitter voltage of 1200V. This type of IGBT has a wide variety of applications, including high- and low-side switches, light dimmers, digital signal processors, and motor drives. It is also commonly used in automotive applications such as engine control, alternator/regulator, body control, and motor drives.
The working principle of the APTGF90DH60TG is based on the controlling of the output of a bipolar junction transistor. The virtual gate is used to switch on and off the forward-biased side of the transistor. By controlling the voltage applied to the gate, the current can be varied, which allows the device to act as a switch or dimmer. When a voltage is applied to the gate, it causes the current to flow through the transistor. The voltage across the forward-biased junction increases and the current increases until the transistor is fully switched on.
The APTGF90DH60TG is an advanced IGBT module with excellent performance and reliability for various applications. It is capable of carrying high currents and provides good isolation from the environment. The module also offers low on-state voltage drop and fast switching speed, which makes it ideal for high-power applications such as motor drives and digital signal processors.
In conclusion, the APTGF90DH60TG is an advanced IGBT module with excellent performance and reliability for various applications. Its working principle is based on the controlling of the output of a bipolar junction transistor and it is used in many systems such as automotive, lighting, and power conversion applications. It is highly reliable, fast switching, and offers low on-state voltage drop, which makes it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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