Allicdata Part #: | APTGT75TL60T3G-ND |
Manufacturer Part#: |
APTGT75TL60T3G |
Price: | $ 48.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | POWER MODULE IGBT 600V 75A SP3 |
More Detail: | IGBT Module Trench Field Stop Three Level Inverter... |
DataSheet: | APTGT75TL60T3G Datasheet/PDF |
Quantity: | 14 |
1 +: | $ 44.44020 |
10 +: | $ 41.74440 |
25 +: | $ 39.85930 |
100 +: | $ 37.70480 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Level Inverter |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 75A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 4.62nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP3 |
Supplier Device Package: | SP3 |
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The APTGT75TL60T3G is a type of IGBT module designed as a general-purpose structure and accommodates different applications in the field of power electronics. It is operated as a high power switch, which cooperates with a insulated gate controller to increase switching frequency and reduce switching losses.
IGBTs (Insulated Gate Bipolar Transistors) are a type of switching device that combines two kinds of semiconductor components within its structure: the P-channel and N-channel FET (Field Effect Transistor). This design offers a reliable switching capacity with low on-state voltage drop, low turn-on and turn-off losses, and superior thermal and electrical performance. These products are widely used in various industries as an ideal solution for applications such as power supplies, motor controllers, welding machines, and UPS devices.
The APTGT75TL60T3G module is a three-level system composed of three FET (Field Effect Transistor) barriers, two gates, and one negative gate. It is equipped with several specific features, such as:
- Low Rds(on) in Trench-Plus IGBT technology to reduce conduction losses.
- High break-over voltage to reduce turn-on losses.
- Optimized EMI Filter to minimize electromagnetic radiation.
- Low profile and wide-body electrical connection pads.
- Integrated safety device against short-circuits and overtemperature.
The main function of this module is to establish an electrical connection between the source and the load by controlling the voltage, current, and power of the power supply. It is mainly used in applications such as motor control, energy conversion and power factor correction for medium and low-voltage applications.
The working principle of the APTGT75TL60T3G module can be described as follows: the IGBT module typically comprises a base element, a drain element and a separate gate terminal for the control of the output current. When the gate drive is applied, the FETs will be activated, and the flow of electrons between the source and the drain is switched on and off. This means that the current flow can be regulated and monitored by the gate drive signals. The switching frequency of the device is usually controlled by the PWM signals applied at the gate terminal. A higher frequency provides a better performance in terms of switching losses.
In short, the APTGT75TL60T3G module offers excellent performance in the field of power electronics, thanks to its high-switching speed, low turn-on and turn-off losses, and superior thermal and electrical attributes. This module is mainly used in applications like motor control, energy conversion, and power factor correction for medium and low voltage applications.
The specific data is subject to PDF, and the above content is for reference
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