APTGT150A60T3AG Allicdata Electronics
Allicdata Part #:

APTGT150A60T3AG-ND

Manufacturer Part#:

APTGT150A60T3AG

Price: $ 37.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOD IGBT 600V 225A SP3
More Detail: IGBT Module Trench Field Stop Half Bridge 600V 225...
DataSheet: APTGT150A60T3AG datasheetAPTGT150A60T3AG Datasheet/PDF
Quantity: 1000
100 +: $ 34.49390
Stock 1000Can Ship Immediately
$ 37.95
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 225A
Power - Max: 600W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 9.2nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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APTGT150A60T3AG modules, encompassing a type of Insulated Gate Bipolar Transistor (IGBT) chip, are widely used when it comes to applications requiring power levels of up to several kilowatts of power. Such power and electrical devices are frequently used in the motor drive and power control markets, and the APTGT150A60T3AG module, offered by Infineon Technologies, offers several qualities and specifications that makes it a preferable component.

In terms of electrical properties, the APTGT150A60T3AG module has a collector-emitter voltage rating of 600V, making it possible to use it to control relatively high power input components. This voltage rating is also beneficial when considering current capacity, as it is capable of handling currents of up to 150A at a temperature of 25°C, while the temperature of the environment should not exceed 125°C in order to ensure the component\'s proper running.

The APTGT150A60T3AG module is constructed in a module package, which means that it has been designed to provide, via interconnected electrical devices, a unified component capable of controlling a circuit within the same package. The module package includes a hybrid heatsink for improved cooling, allowing for better usage over varying temperatures and possible extended operation times.

The working principle of the APTGT150A60T3AG module revolves around the switching properties and behavior of the IGBTs inside of it. IGBTs, the combination of both MOSFET gate-controlled bipolar transistors, offer reliable switching thanks to their bi-directional characteristics. This module offers efficient power conversion and stability, thanks to the IGBTs and the module configuration, allowing it to effectively control the necessary parts within electronic circuits with greater accuracy.

By utilizing the conducting and blocking capacities of the IGBTs, the APTGT150A60T3AG module can be used in a wide array of applications and systems. This includes, but is not limited to, automated system controls, energy management systems, solar and wind power harnessing, drives and motor controls, programmable logic controllers, UPS systems, and motor stroke and speed control.

The APTGT150A60T3AG module is a power module that has been optimized to be used in a variety of systems and applications. Its superior construction, in terms of electrical and thermal characteristics, makes it suitable for power level handling of several kilowatts and current ratings of up to 150A. Its working principle revolves around the conducting and blocking capabilities of its IGBTs, allowing for improved accuracy when it comes to controlling the parts in an electronic circuit. As a result, this power module has seen wide use in a variety of fields, most notably in the motor drive, energy management, and power control markets.

The specific data is subject to PDF, and the above content is for reference

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